Redistribution Structure Layout for Thin, Strong Semiconductor Packages
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving smaller, faster, and more efficient packaging techniques as demand increases for miniaturization, higher speed, greater bandwidth, lower power consumption, and reduced latency, particularly in integrating semiconductor dies with existing manufacturing processes.
Innovation Solution
The development of a semiconductor package manufacturing process involving a redistribution structure with alternating conductive and dielectric layers, allowing for flip-chip bonding and underfill encapsulation, which reduces package thickness and enhances bonding strength while accommodating current manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional packaging techniques are used, then manufacturing process compatibility is maintained, but package size reduction and integration density improvement are limited
Solution Approach 1:
The patent transitions from planar packaging to three-dimensional stacked packaging by introducing vertical interconnect structures (through-silicon vias, bump bonds) that enable multiple semiconductor dies to be stacked above each other. This dimensional change allows significant reduction in footprint area while maintaining manufacturing compatibility through adapted bonding and vias formation processes.
Solution Approach 2:
The patent implements nested packaging by placing multiple semiconductor dies and interconnect structures within a compact three-dimensional space. Smaller components are positioned within the vertical and horizontal space of larger components, achieving high integration density without requiring proportional increases in package footprint.
2Manufacturing precision
If feature size is continuously reduced to increase integration density, then more devices can be integrated into a given area, but manufacturing complexity and process control difficulty increase
Solution Approach 1:
The patent divides the semiconductor manufacturing process into distinct modules: separate die fabrication, separate interconnect structure formation, and separate bonding/stacking operations. This segmentation allows each module to be optimized and controlled independently, reducing overall process complexity despite high integration density requirements.
Solution Approach 2:
The patent performs preliminary actions by pre-forming interconnect structures (bumps, vias) and testing semiconductor dies before final assembly. This includes forming conductive patterns, creating bonding surfaces, and performing electrical testing on individual dies prior to stacking, which simplifies the final assembly process and improves yield.
3Length of stationary object
If package thickness is reduced, then miniaturization is achieved, but bonding strength and structural integrity may be compromised
Solution Approach 1:
The patent employs composite interconnect structures combining different materials and bonding mechanisms. This includes metal bumps with solder joints, multi-layer conductive patterns, and hybrid bonding techniques that distribute mechanical stress across multiple interfaces and materials, maintaining bonding strength despite reduced package thickness.
Solution Approach 2:
The patent compensates for reduced thickness by strengthening bonds in the horizontal plane through extended interconnect patterns and distributed bonding surfaces. The interconnect structures spread bonding forces across larger lateral areas, offsetting the reduced vertical dimension and maintaining overall structural integrity.
Data Source
AI summary
A semiconductor package includes a redistribution structure and an encapsulated die electrically connected to the redistribution structure. The redistribution structure includes a first conductive pad, first and second conductive vias, and a first dielectric layer. The first conductive pad includes opposing first and second sides, the first conductive via lands on the first side of the first conductive pad and is tapered in a direction from the first side toward the second side. The second conductive via lands on the second side of the first conductive pad and is tapered in a direction from the second side toward the first side. The first dielectric layer laterally covers the first conductive pad and the first conductive via, and the first dielectric layer includes opposing first and second surfaces. The encapsulated die is disposed below the first side of the first conductive via.