Multilayer Redistribution Substrate Bonding to Reduce Warpage
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Solution Overview
Problem
The continuous formation of multilayer redistribution circuit layers on temporary carriers often results in warpage due to coefficient of thermal expansion (CTE) mismatch between materials, leading to adverse effects on yield and electrical performance of semiconductor substrate structures.
Innovation Solution
The semiconductor substrate structure is manufactured by separately forming multiple groups of circuit structures on temporary carriers and then directly bonding them to form a multilayer redistribution structure, reducing warpage and improving yield and electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If multilayer redistribution circuit layers are continuously formed on a temporary carrier, then the redistribution circuit layer structure is completed, but warpage occurs due to CTE mismatch between materials
Solution Approach 1:
The patent divides the multilayer redistribution circuit structure into multiple separate groups of circuit structures, each formed independently on its own temporary carrier. This segmentation prevents the accumulation of CTE mismatch stress that would occur in continuous formation, thereby reducing warpage while still achieving the complete multilayer structure through subsequent bonding of the separate groups.
2Productivity
If multiple layers are continuously stacked on the temporary carrier, then the multilayer structure is formed, but warpage becomes more obvious
Solution Approach 1:
The patent segments the multilayer formation process into multiple independent batches, where each batch forms a group of circuit structures with fewer layers on separate temporary carriers. This reduces the cumulative warpage effect in each batch while maintaining overall productivity through parallel processing and subsequent bonding of the segmented groups.
Solution Approach 2:
The patent performs preliminary formation of circuit structure groups on separate temporary carriers before final assembly. Each group is pre-formed with controlled layer stacking, allowing stress management and warpage reduction before the complete multilayer structure is assembled through bonding of the pre-formed groups.
3Ease of manufacture
If warpage occurs in the multilayer structure, then the structure is still formed, but yield and electrical performance are adversely affected
Solution Approach 1:
The patent segments the multilayer structure into separate circuit structure groups formed on individual temporary carriers, preventing warpage accumulation. This segmentation ensures that each group maintains proper shape and electrical characteristics, thereby preserving yield and electrical performance while still achieving the complete multilayer redistribution structure through bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces warpage and maintains better yield and electrical performance by assembling multiple groups of circuit structures into a multilayer redistribution structure, avoiding the issues associated with continuous stacking.
Implementation Method 1
The first group of circuit structure and the second group of circuit structure are directly bonded, so that the first bonding layer is bonded to the second bonding layer
Data Source
AI summary
A semiconductor substrate structure includes a first group of circuit structure and a second group of circuit structure. The first group of circuit structure includes multiple first circuit layers and a first bonding layer. The second group of circuit structure includes multiple second circuit layers and a second bonding layer. The second group of circuit structure is disposed on the first group of circuit structure and is electrically connected to the first group of circuit structure. The first bonding layer is bonded to the second bonding layer to form a multilayer redistribution structure. A manufacturing method of the semiconductor substrate structure is also provided.