Redistribution Structure Internal Supports for Warpage Control
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Solution Overview
Problem
The semiconductor industry faces challenges in reducing warping and cracking in small package structures due to the integration of multiple interconnects and integrated circuit dies, which affects the structural stability and performance of semiconductor devices.
Innovation Solution
Incorporating internal supports, such as dummy dies or bulk materials, within the redistribution structure to provide structural stability and reduce stress, which are placed between interconnect regions to align with the gaps between adjacent interconnects and integrated circuit dies, thereby reducing warping and cracking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple interconnects and integrated circuit dies are integrated into small package structures, then the integration density and functionality are improved, but warping and cracking occur due to stress accumulation
Solution Approach 1:
The patent introduces internal support structures that segment the package into distinct regions: active interconnect regions and support regions. These internal supports act as independent structural elements that divide the stress distribution, preventing stress accumulation across the entire package. The segmentation allows the package to maintain high integration density in active areas while providing dedicated stress-management zones.
Solution Approach 2:
The internal support structures are strategically positioned in specific locations within the package, creating local quality variations. Areas with high stress concentration receive additional support, while areas with lower stress requirements maintain their original configuration. This localized approach to structural reinforcement allows the package to maintain overall miniaturization while providing targeted stress relief where needed.
2Reliability
If internal support structures are added to reduce warping and cracking, then structural stability is improved, but package complexity increases
Solution Approach 1:
The internal support structures are designed to match the material composition and structural characteristics of the existing package components. By using the same or similar materials and fabrication processes, the internal supports integrate seamlessly with the surrounding interconnects and dies, maintaining manufacturing homogeneity. This approach reduces process complexity despite adding structural elements.
Solution Approach 2:
The internal support structures serve multiple functions simultaneously: they provide mechanical reinforcement to prevent warping and cracking, act as stress distribution elements, and can potentially serve as thermal management pathways. This multi-functionality reduces the need for separate dedicated components, thereby limiting the increase in overall package complexity.
3Reliability
If internal supports are placed between interconnect regions, then stress is reduced and warping is minimized, but manufacturing precision requirements increase
Solution Approach 1:
The internal support structures are formed and positioned during the early stages of package fabrication, before final assembly and interconnect formation. This preliminary action allows subsequent processing steps to be performed without concern for support structure alignment, as the supports are already in place to guide and stabilize the manufacturing process. This sequencing reduces the precision requirements for later alignment-critical steps.
Solution Approach 2:
The internal support structures are designed with asymmetric geometries that naturally align with the stress distribution patterns in the package. Rather than requiring precise symmetric positioning, the asymmetric design allows the supports to self-align with high-stress regions based on their functional requirements. This approach trades geometric precision for functional effectiveness, reducing manufacturing precision requirements.
Data Source
AI summary
A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.