Redistribution Thermal Release Layer for Semiconductor Heat Dissipation
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly in thermal dissipation and power consumption.
Innovation Solution
A semiconductor device design incorporating a redistribution structure with a thermal release layer composed of organic materials or fluoropolymers intermingled with carbon nanotubes, and a conductive layer formed from metals like tungsten or copper, along with an adjustment layer of sp2 hybridized carbon atoms, to maintain a thermal resistance between 0.04° C. cm2/Watt and 0.25° C. cm2/Watt.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional materials are used for redistribution layers in scaled-down semiconductor devices, then manufacturing simplicity is maintained, but thermal dissipation performance deteriorates
Solution Approach 1:
The patent applies composite materials by combining carbon nanotubes with organic materials or fluoropolymer materials to create a thermal release layer. This composite structure achieves superior thermal dissipation performance (thermal resistance between 0.04° C. cm2/Watt and 0.25° C. cm2/Watt) while managing the complexity through targeted material selection and integration into the redistribution structure.
Solution Approach 2:
The patent utilizes parameter changes by controlling the thermal resistance of the thermal release layer to fall within a specific range (0.04° C. cm2/Watt to 0.25° C. cm2/Watt). This parameter optimization enables effective thermal management in scaled-down devices, balancing thermal dissipation performance with device complexity constraints.
2Temperature
If thermal resistance is reduced to improve thermal dissipation, then temperature control improves, but electrical conductivity may deteriorate
Solution Approach 1:
The patent segments the redistribution structure into functionally distinct layers: a conductive layer for electrical connectivity and a thermal release layer for thermal management. This segmentation allows each layer to be optimized independently—the conductive layer maintains electrical conductivity while the thermal release layer achieves the desired thermal resistance range without compromising overall device reliability.
Solution Approach 2:
The patent applies local quality by assigning different material properties to different regions of the redistribution structure. The conductive layer uses materials optimized for electrical conductivity, while the thermal release layer uses carbon nanotube-based composites optimized for thermal resistance control. This localized material selection resolves the contradiction between thermal and electrical performance requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances thermal dissipation, improves performance and reliability, and reduces power consumption by optimizing thermal resistance and electrical conductivity.
Implementation Method 1
a first redistribution thermal release layer positioned on the first redistribution conductive layer, wherein the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm2/Watt and about 0.25° C. cm2/Watt
Implementation Method 2
an adjustment layer of sp2 hybridized carbon atoms, to maintain a thermal resistance between 0.04° C. cm2/Watt and 0.25° C. cm2/Watt
Data Source
AI summary
The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first pad above the substrate, forming a first redistribution conductive layer on the first pad, and forming a first redistribution thermal release layer on the first redistribution conductive layer. The first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm2/Watt and about 0.25° C. cm2/Watt.