Redistribution Trace Surface Layer for Leakage Prevention
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to achieve high integration and performance with fine redistribution traces of 10 um or less, which often results in leakage between traces and reduces the margin for forming additional features, making photolithography processing difficult.
Innovation Solution
A semiconductor device manufacturing method involving the formation of redistribution traces with a surface layer wider than the traces, using a stacked structure of materials like Ti and Cu for barrier metals, and electroplating to embed conductors, while etching the trace sides to reduce width and forming surface layers with higher etch resistance to prevent leakage and increase processing margins.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the pitch of redistribution traces is reduced to achieve high integration, then the capacity and operation speed of semiconductor devices are improved, but leakage between traces occurs and processing becomes difficult
Solution Approach 1:
A protective film is formed covering the redistribution traces before subsequent processing steps. This preliminary protective action prevents leakage between closely-spaced traces and provides a stable base for further processing, allowing fine-pitch traces to be manufactured without compromising reliability
Solution Approach 2:
The protective film is selectively formed in specific regions where leakage prevention is critical, such as areas with closely-spaced redistribution traces. This localized approach addresses the leakage problem at critical interfaces while maintaining design flexibility in other areas
2Productivity
If the pitch of redistribution traces is reduced, then high integration is achieved, but the margin for forming additional features decreases
Solution Approach 1:
The protective film is formed in advance to establish a stable processing platform before forming additional features such as wires or bumps. This preliminary structure provides sufficient processing margin even when trace pitch is reduced, allowing subsequent features to be formed with appropriate clearance
Solution Approach 2:
The protective film adds a vertical dimension to the structure, creating a three-dimensional configuration where the film covers the traces from above. This dimensional change provides processing margin in the vertical direction, compensating for reduced horizontal spacing between traces
3Productivity
If photolithography processing is performed on fine-pitch traces, then high integration is achieved, but processing difficulty increases due to reduced margins
Solution Approach 1:
The protective film is formed before photolithography processing to provide a stable, well-defined pattern that simplifies subsequent lithography steps. This preliminary structure acts as a reliable mask or reference, making it easier to form additional features with precise positioning even at fine pitch dimensions
Solution Approach 2:
The protective film provides enhanced local definition and protection at critical photolithography interfaces, such as trace edges and feature boundaries. This localized quality improvement ensures precise pattern transfer during photolithography while maintaining ease of manufacture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for reduced pitch redistribution traces with minimized leakage and increased processing margins, improving semiconductor device performance and integration without increasing the number of processing steps.
Implementation Method 1
electroplating to embed conductors
Data Source
AI summary
According to one embodiment, a semiconductor substrate, a redistribution trace, and a surface layer are provided, with the surface layer provided on the redistribution trace. On the semiconductor substrate, a wire and a pad electrode are formed. The redistribution trace is formed on the semiconductor substrate. The surface layer is larger in width than the redistribution trace, and extends beyond the edge of the redistribution trace.