Low-Temperature Metal Layer Formation via Redox Mediation
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Solution Overview
Problem
Current semiconductor manufacturing methods require high temperatures to form metal-containing layers, which can lead to device deterioration and reduced reliability, especially when integrating high-speed and high-integration semiconductor devices.
Innovation Solution
A method involving the use of a reducing agent with multiple oxidation states, applied at a lower temperature, to form a metal-containing layer by depositing a metal precursor and a reducing agent on a substrate, allowing the second metal in the reducing agent to oxidize and reduce the first metal, thereby forming a stable metal-containing layer at temperatures between 150° C. and 400° C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature is used to form metal-containing layers, then the metal layer can be formed effectively, but device deterioration occurs and reliability reduces
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using a reducing agent with multiple oxidation states (such as Mo, W, or Ru) that can undergo stepwise reduction. This allows the metal-containing layer to be formed at lower temperatures (150-400°C) by controlling the oxidation state transitions of the reducing agent, thereby resolving the contradiction between effective metal layer formation and device reliability
Solution Approach 2:
The patent introduces a reducing agent as an intermediary substance that facilitates the formation of metal-containing layers at lower temperatures. The reducing agent (containing metals with multiple oxidation states) acts as a mediator between the metal precursor and the substrate, enabling low-temperature deposition while preventing device deterioration that would occur at high temperatures
2Manufacturing precision
If high temperature processing is applied, then metal layers form properly, but activation energy requirements increase causing device deterioration
Solution Approach 1:
The patent changes the energy parameters by utilizing the multiple oxidation states of the reducing agent (Mo, W, Ru) to enable stepwise electron transfer. This reduces the activation energy required for metal layer formation from high levels (requiring high temperature) to lower levels (enabling 150-400°C processing), while maintaining proper metal layer formation quality through controlled reduction reactions
Solution Approach 2:
The patent replaces the thermal energy mechanism (high temperature heating) with a chemical energy mechanism (redox reactions of the reducing agent). Instead of relying on high temperature to provide activation energy, the system uses the chemical potential energy stored in the multiple oxidation states of the reducing agent to drive metal layer formation at lower temperatures, thereby reducing overall energy consumption and preventing device deterioration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of metal-containing layers at lower temperatures, reducing activation energy and preventing device deterioration, thus enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal, and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer
Data Source
AI summary
A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.