Reduced-Height Gate Electrode Structure for Lower Parasitic Capacitance
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Solution Overview
Problem
Existing semiconductor devices face challenges in reducing parasitic capacitances, which limits their operational speed due to increased resistance-capacitance (RC) time constants.
Innovation Solution
The semiconductor device incorporates a reduced height gate electrode layer, with a top surface distal from the substrate being equal to or less than half of the depth of the metallurgical junction, thereby reducing the sidewall surface area and parasitic capacitances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the gate electrode layer height is reduced, then parasitic capacitances are reduced, but the gate control over the channel may be weakened
Solution Approach 1:
The patent applies parameter changes by reducing the height of the gate electrode layer to a specific range (equal to or less than half of the metallurgical junction depth) to optimize the balance between minimizing parasitic capacitance and maintaining adequate gate control. This dimensional parameter adjustment directly addresses the technical contradiction by finding the optimal height value that reduces harmful capacitance while preserving necessary control functionality.
2Loss of time
If the gate electrode layer height is reduced, then the RC time constant is reduced, but the operational speed improvement may be limited by other factors
Solution Approach 1:
The patent changes the height parameter of the gate electrode layer to reduce the RC time constant, which directly impacts the speed response of the device. By optimizing this geometric parameter, the patent addresses the time loss associated with RC delays while recognizing that operational speed is influenced by multiple factors beyond just the gate height.
3Area of stationary object
If the gate electrode layer height is reduced, then the sidewall surface area is reduced, but the manufacturing precision requirements may increase
Solution Approach 1:
The patent specifies a particular parameter range for the gate electrode layer height (equal to or less than half of the metallurgical junction depth) to achieve the desired reduction in sidewall surface area. This parameter specification balances the benefit of reduced surface area with the practical constraints of manufacturing precision, ensuring that the dimensional control is achievable with standard fabrication processes.
Data Source
AI summary
The present disclosure generally relates to a semiconductor device having a reduced height gate electrode layer. In an example, a semiconductor device includes a substrate, a gate dielectric layer, a gate electrode layer, a doped source/drain region, and a dielectric layer. The gate dielectric layer is on a surface of the substrate. The gate electrode layer is on the gate dielectric layer. The doped source/drain region is in the substrate and has a metallurgical junction parallel to a plane coplanar with the surface of the substrate. The metallurgical junction extends to a first vertical distance from the surface of the substrate. The gate electrode layer has a top surface that is a second vertical distance away from the surface of the substrate. The second vertical distance is equal to or less than half of the first vertical distance. The dielectric layer is over the substrate and the gate electrode layer.