Reduced Transistor Bridge Attenuator for 5G Area Minimization

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Solution Overview

Problem

Conventional bridge attenuator designs require a large number of transistors, leading to increased area occupation and higher transistor count, which is undesirable for modern communication systems like 5G wireless communications.

Innovation Solution

The design incorporates a bypass circuit, resistor circuit, and staggered circuits with fewer transistors, reducing the maximum voltage swing across each bridge arm, allowing for a reduced transistor count while maintaining operational efficiency and area minimization.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional bridge attenuator designs use a common number of transistors in each path to prevent drain-to-source breakdown, then transistor reliability is improved, but the transistor count and area occupation increase

Engineering Contradiction:
Improvetransistor reliabilityVSAvoidtransistor count
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by assigning different numbers of transistors to different paths based on their specific voltage requirements. The first path has a first number of transistors while the second path has a second number of transistors, allowing each path to be optimized for its local voltage conditions rather than using a uniform transistor count throughout the bridge attenuator.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The bridge attenuator is segmented into multiple paths with different transistor configurations. Each path is independently designed with the appropriate number of transistors to handle its specific voltage swing requirements, dividing the overall problem into manageable segments rather than treating the entire bridge as a uniform structure.

Inventive Principle:
Principle #1Segmentation

2Reliability

If a large number of transistors are used in each path to handle maximum voltage, then voltage breakdown is prevented, but area occupation increases

Engineering Contradiction:
Improvevoltage breakdown preventionVSAvoidarea occupation
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

Different paths are assigned different numbers of transistors based on their local voltage requirements. Paths experiencing higher voltage swings receive more transistors for breakdown protection, while paths with lower voltage requirements use fewer transistors, optimizing area utilization while maintaining reliability where needed.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the parameter of transistor count from a fixed uniform value to a variable value that depends on the voltage swing characteristics of each path. This parameter change allows the design to adapt transistor usage to actual voltage requirements, reducing area occupation while maintaining breakdown protection.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10637442B2Reduced transistor bridge attenuator
Publication Date: 2020.04.28 AXIRO SEMICONDUCTOR INC
  • US10637442B2 patent drawing
  • US10637442B2 patent drawing
  • US10637442B2 patent drawing

AI summary

An apparatus includes a bypass circuit a resistor circuit and multiple staggered circuits. The bypass circuit may have a predetermined number of a plurality of transistors connected in series between an input node and an output node. The resistor circuit may have a given number of resistors connected in series between the input node and the output node. Adjoining pairs of the resistors may be connected at given nodes. The staggered circuits may be connected between the given nodes and either the input node or the output node. Each staggered circuit may have a respective number of the transistors connected in series. The bypass circuit, the resistor circuit and the staggered circuits may form part of a bridge attenuator.