Redundancy Memory Device Selecting Circuits Defect Management
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Solution Overview
Problem
Current semiconductor memory devices face challenges in efficiently managing defective sub cell arrays and sense amplifiers without increasing the circuit area, as existing solutions either cannot save both simultaneously or require additional redundancy areas, leading to increased circuit size.
Innovation Solution
Incorporating a semiconductor memory device configuration with both a first selector for switching sub cell arrays and a second selector for switching sense amplifiers, allowing for efficient use of redundancy without additional circuit area, enabling the saving of unusable sub cell arrays and sense amplifiers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a single sense amplifier is used to replace defective sub cell arrays, then the circuit area can be reduced, but the sense amplifier becomes overloaded and cannot maintain high-speed operation
Solution Approach 1:
The sense amplifier is divided into multiple independent sense amplifiers (first sense amplifier, second sense amplifier, etc.), each capable of independently handling specific sub cell arrays. This segmentation prevents any single sense amplifier from being overloaded while maintaining high-speed operation, and allows defective sub cell arrays to be reassigned to functional sense amplifiers without compromising performance.
2Reliability
If additional redundancy areas are added to save both defective sub cell arrays and sense amplifiers, then the reliability is improved, but the circuit area increases
Solution Approach 1:
Each sense amplifier is designed to be universal and can handle multiple sub cell arrays, not just one dedicated array. This multi-functionality allows any functional sense amplifier to replace defective sub cell arrays, and any functional sub cell array can be assigned to available sense amplifiers, enabling the system to save both defective sub cell arrays and sense amplifiers without requiring additional redundancy areas.
3Adaptability or versatility
If multiple sense amplifiers are provided for redundancy, then the ability to save defective components is improved, but the circuit area and device complexity increase
Solution Approach 1:
The selector circuits are designed to dynamically reconfigure connections between sub cell arrays and sense amplifiers based on defect locations. Rather than fixed dedicated connections, the system can adaptively assign any functional sub cell array to any functional sense amplifier, providing high defect replacement capability while keeping the selector circuit complexity manageable through systematic control logic.
Data Source
AI summary
According to one embodiment, a memory device includes: a first storage area configured to store data; a first sense amplifier; a first data latch; a first selector configured to select either connection between the first data latch and the first sense amplifier or connection between the first data latch and another sense amplifier; and a second selector configured to select either connection between the first storage area and the first sense amplifier or connection between another storage area and the first sense amplifier.