Redundant Through-Silicon Vias for Fault Tolerant Memory Routing

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Solution Overview

Problem

Manufacturing of memory devices with through-silicon vias (TSVs) is challenging due to their unreliability and difficulty in physical repair, leading to entire circuit disposal even if only one TSV is faulty, making efficient data rerouting around faulty TSVs necessary.

Innovation Solution

Incorporating buffer and selection circuitry with redundant TSVs, allowing data to be rerouted around faulty TSVs by turning off the faulty transistor and using adjacent transistors, and adjusting downstream routing to utilize redundant TSVs for signal transmission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional TSV manufacturing is used without redundancy, then device complexity is reduced, but reliability deteriorates because entire circuits must be scrapped when a single TSV is faulty

Engineering Contradiction:
Improvecircuit reliabilityVSAvoidTSV structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-configuring redundant TSVs and associated buffer/selection circuitry before any faults occur. The redundant TSVs are manufactured alongside primary TSVs, and the selection circuitry is pre-built to enable automatic switching. This allows the system to be prepared in advance for potential TSV failures, ensuring reliability without requiring complex post-failure modifications.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the structural parameter of the TSV system by adding redundant TSVs and control circuitry. This transforms the system from a simple single-path TSV configuration to a multi-path configuration with selectable redundancy. The parameter change enables the system to maintain functionality even when primary TSVs fail, directly addressing the reliability concern while managing complexity through systematic design.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If redundant TSVs with buffer and selection circuitry are incorporated, then reliability is improved by enabling data rerouting, but device complexity increases

Engineering Contradiction:
ImproveTSV fault toleranceVSAvoidcircuitry complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the TSV system into independent functional units: primary TSVs, redundant TSVs, buffer circuits, and selection circuitry. Each segment can be independently controlled and switched. This modular segmentation allows the complexity to be managed through standardized interfaces while providing robust fault tolerance, as failures in one segment do not necessarily affect other segments.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces buffer circuits and selection circuitry as intermediary elements between the primary TSVs and the rest of the system. These intermediaries manage the complexity of switching between primary and redundant TSVs, providing a controlled interface that simplifies the overall system architecture. The selection circuitry acts as a mediator that automatically routes signals through appropriate TSVs based on their operational status.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If faulty TSVs require full device repair or replacement, then manufacturing precision is maintained, but productivity deteriorates due to device disposal and rework

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidTSV fabrication accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by incorporating redundant TSVs and selection circuitry during the initial manufacturing process. This allows the system to be self-correcting for TSV failures without requiring post-manufacturing repair interventions. The preliminary configuration of redundancy pathways enables automatic fault masking, maintaining productivity by eliminating the need for device disposal and rework while preserving manufacturing precision standards.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS11705429B2Redundant through-silicon vias
Publication Date: 2023.07.18 MICRON TECHNOLOGY INC
  • US11705429B2 patent drawing
  • US11705429B2 patent drawing
  • US11705429B2 patent drawing

AI summary

A device may include a first die having a first circuit and a second die having a second circuit. The die may be separated by a material layer. The material layer may include multiple through-silicon vias (TSVs) for electrically coupling the first die to the second die. A first TSV of the TSVs may electrically couple the first circuit to the second circuit and a second TSV of the TSVs may include a redundant TSV that electrically bypasses the first TSV to couple the first circuit to the second circuit if a fault is detected in the first TSV.