Redundant Word Line Control for Memory Disturbance

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Solution Overview

Problem

Memory devices face data loss and degradation due to word line disturbance, which occurs when frequently activated word lines cause electromagnetic interference and charge leakage, leading to data corruption in memory cells.

Innovation Solution

A memory device design that includes a redundant word line with higher immunity to word line disturbance, where a word line control unit detects frequently activated word lines and replaces them with redundant lines, reducing data loss by copying data from frequently activated word lines to redundant lines during active and precharge operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a word line is frequently activated to improve access speed, then productivity is improved, but word line disturbance occurs causing data loss

Engineering Contradiction:
Improveword line activation frequencyVSAvoiddata integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent creates a copy of the frequently activated word line (WLK) by copying data from memory cells coupled to WLK to memory cells coupled to an adjacent word line (WLK+1). This copy serves as a backup that can be used when the original word line experiences disturbance, thereby maintaining data integrity while allowing frequent activation of the original word line for high productivity.

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent performs preliminary data copying to an adjacent word line before the frequently activated word line experiences data loss. By proactively creating a backup copy when the word line is detected to be frequently activated, the system prevents data loss rather than reacting after it occurs, ensuring continuous reliable operation.

Inventive Principle:
Principle #10Preliminary action

2Area of stationary object

If word lines are arranged at smaller distances to reduce area, then area is reduced, but electromagnetic interference between word lines increases

Engineering Contradiction:
Improvecell array areaVSAvoidelectromagnetic interference
Core Design Contradiction:
Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

The patent uses an adjacent word line (WLK+1) as an intermediary to store backup data. This intermediary word line acts as a buffer that receives copied data from the frequently activated word line, isolating the harmful electromagnetic effects while still providing a functional backup mechanism within the compact cell array structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If refresh operations are performed frequently to prevent data loss, then reliability is improved, but energy consumption increases

Engineering Contradiction:
Improvedata retentionVSAvoidrefresh operation energy
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

Instead of performing frequent refresh operations on the original word line, the patent creates a static copy on an adjacent word line. This copy can be used directly when data loss occurs, eliminating the need for energy-intensive refresh operations and reducing overall energy consumption while maintaining data reliability.

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively reduces data loss and errors caused by word line disturbance, enhancing the reliability of memory devices by using a redundant word line with increased immunity to interference, thereby maintaining data integrity.

Implementation Method 1

frequently activated word lines cause electromagnetic interference and charge leakage

Methodology Applied
Scientific EffectElectromagnetic interference: Electromagnetic Induction

Data Source

PatentUS9431081B2Memory device
Publication Date: 2016.08.30 SK HYNIX INC
  • US9431081B2 patent drawing
  • US9431081B2 patent drawing
  • US9431081B2 patent drawing

AI summary

A memory device includes a plurality of normal word lines arranged at a first distance from each other, a redundant word line arranged at a second distance, which is greater than the first distance from a normal word line adjacent to the redundant word line, among the normal word lines, and a word line control unit suitable for selectively activating the normal word lines, and replacing a frequently activated word line with the redundant word line when the frequently activated word line is detected.