Reference Voltage Generator Using Beta-Multiplier Scheme
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Solution Overview
Problem
Conventional reference voltage generators in semiconductor memory devices are sensitive to temperature variations, leading to unstable reference voltage levels, which can result in margin shortages and errors in core operations, and they consume high power due to the use of bipolar junction transistors and complex circuits.
Innovation Solution
A beta-multiplier scheme is employed to generate a reference voltage, utilizing transistors that operate in the weak inversion region, with a current proportional to temperature variations and a threshold voltage inversely proportional to temperature, to compensate for temperature changes, thereby stabilizing the reference voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bipolar junction transistors and complex circuits are used in conventional reference voltage generators, then temperature sensitivity is reduced through compensation mechanisms, but power consumption increases and device area expands
Solution Approach 1:
The patent extracts and eliminates bipolar junction transistors from the reference voltage generator circuit, replacing them entirely with CMOS transistors operating in weak inversion region. This removal of the bipolar transistor subsystem achieves temperature compensation through alternative mechanisms (subthreshold conduction characteristics) while dramatically reducing power consumption and device area.
Solution Approach 2:
The patent changes the operating parameters of CMOS transistors by operating them in the weak inversion region rather than strong inversion. This parameter change enables the transistors to exhibit temperature-dependent characteristics that provide inherent temperature compensation, eliminating the need for complex bipolar transistor compensation circuits and reducing overall power consumption.
2Reliability
If bipolar junction transistors and complex circuits are used in conventional reference voltage generators, then temperature sensitivity is reduced through compensation mechanisms, but device area increases
Solution Approach 1:
The patent extracts and eliminates bipolar junction transistors from the reference voltage generator circuit, replacing them entirely with CMOS transistors operating in weak inversion region. This removal of the bipolar transistor subsystem achieves temperature compensation through alternative mechanisms (subthreshold conduction characteristics) while dramatically reducing power consumption and device area.
Solution Approach 2:
The CMOS transistors in the patent perform multiple functions simultaneously: they generate the reference voltage, provide temperature compensation through their weak inversion characteristics, and replace the functionality previously requiring separate bipolar transistor compensation circuits. This multi-functionality reduces overall device area while maintaining temperature stability.
3Use of energy by moving object
If transistors operate in weak inversion region using beta-multiplier scheme, then power consumption and device area are reduced, but circuit design complexity increases
Solution Approach 1:
The patent changes the operating parameters of CMOS transistors by operating them in the weak inversion region rather than strong inversion. This parameter change enables the transistors to exhibit temperature-dependent characteristics that provide inherent temperature compensation, eliminating the need for complex bipolar transistor compensation circuits and reducing overall power consumption.
Solution Approach 2:
The weak inversion region operation provides self-service temperature compensation where the transistors' inherent subthreshold conduction characteristics automatically compensate for temperature variations without requiring external compensation circuits. The circuit self-regulates its temperature response through the physical characteristics of the transistors operating in weak inversion, simplifying the overall design despite the specialized operating region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a stable reference voltage that is insensitive to temperature variations, reduces physical area and power consumption, and improves the accuracy of voltage sensing in semiconductor memory devices.
Implementation Method 1
a current proportional to temperature variations and a threshold voltage inversely proportional to temperature
Implementation Method 2
a threshold voltage inversely proportional to temperature, to compensate for temperature changes, thereby stabilizing the reference voltage
Data Source
AI summary
A reference voltage generator generates a reference voltage having a stable voltage level insensitive to a temperature variation. A reference voltage generator includes a current generating unit configured to generate a reference current proportional to temperature increase, a voltage adjusting unit configured to adjust a reference voltage corresponding to a current level of the reference current, and a start-up driving unit configured to drive and amplify the reference voltage while the voltage adjusting unit operates.