Reference Voltage Circuit Using Channel Ratio Compensation
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Solution Overview
Problem
Existing reference voltage generating circuits in electronic devices are prone to instability due to process errors and temperature changes, leading to fluctuations in the reference voltage level, which can affect the operation of electronic devices.
Innovation Solution
An electronic circuit design that includes a combination of transistors with specific channel widths and lengths to generate a stable reference voltage, using a current supplying circuit, CTFP/PTAT voltage generating circuit, and PTFP/CTAT voltage generating circuit to cancel out the effects of process errors and temperature changes, ensuring a uniform reference voltage level.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a reference voltage generating circuit is designed using conventional semiconductor elements, then the circuit can be manufactured with standard processes, but the reference voltage level becomes unstable due to process errors
Solution Approach 1:
The patent changes the physical parameters of the transistor channel (width and length) to generate specific potential differences that compensate for process errors. By adjusting the channel dimensions, the circuit produces a reference voltage that remains stable despite variations in semiconductor element characteristics during manufacturing
Solution Approach 2:
The patent combines multiple transistors with different channel configurations to create a composite circuit structure. This composite approach integrates transistors with varying channel widths and lengths to generate a combined potential difference that cancels out process errors, achieving stable reference voltage output
2Reliability
If the channel width or length of transistors is adjusted to compensate for process errors, then the reference voltage stability improves, but the manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by making specific transistors have different channel widths or lengths tailored to their functional requirements within the circuit. Each transistor's channel dimensions are optimized for its specific role in generating or regulating potential differences, rather than using uniform dimensions across all transistors
Data Source
AI summary
An electronic circuit includes first to third transistors. The first transistor has a first channel width and a first channel length and generates a first potential difference by passing an operating current based on a first operating voltage. The second transistor has a second channel width and a second channel length and generates a second potential difference based on the operating current. The third transistor generates a third potential difference based on a second operating voltage and the operating current. A sum of a level of the first operating voltage and a level of the first potential difference corresponds to a sum of a level of the second operating voltage, a level of the second potential difference, and a level of the third potential difference. The first channel width is greater than the second channel width, or the first channel length is longer than the second channel length.