Reference Voltage Circuit Using Temperature-Compensated Current
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Solution Overview
Problem
Existing semiconductor devices fail to generate a voltage compensated in terms of both temperature and power-supply voltage, particularly when the voltage is equal to or higher than 1.2 V.
Innovation Solution
A semiconductor device comprising a first electric-current generator circuit with a positive temperature coefficient, a second electric-current generator circuit with a negative temperature coefficient, and a third electric-current generator circuit independent of both temperature and power-supply voltage, generating an electric current that is then used to produce a reference voltage independent of temperature and power-supply voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a reference-voltage generator circuit is designed to generate voltage compensated in terms of temperature and power-supply voltage, then temperature and power-supply voltage compensation is achieved, but the generated voltage is limited to be lower than 1.2 V
Solution Approach 1:
The invention divides the voltage generation into multiple stages: first generating a compensated current through parallel connection of positive-temperature-coefficient and negative-temperature-coefficient current sources, then converting this current to voltage through a high-value resistor. This segmentation allows the system to achieve both temperature compensation and high voltage output by separating the compensation function from the voltage amplification function.
Solution Approach 2:
The invention introduces a high-value resistor as an intermediary element between the compensated current source and the output voltage. This resistor serves as a mediator that converts the compensated current into a high-voltage output while maintaining the compensation characteristics, thereby enabling voltage outputs above 1.2 V without sacrificing temperature and power-supply voltage compensation.
2Measurement precision
If conventional voltage compensation techniques are used, then temperature compensation is achieved, but the circuit complexity increases and voltage output is limited
Solution Approach 1:
The invention changes the fundamental parameter from voltage generation to current generation for compensation. By generating temperature-compensated current first and then converting it to voltage through a resistor, the system achieves accurate temperature compensation with a simpler circuit structure, avoiding the complexity of conventional voltage-based compensation techniques while enabling high voltage output.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves an electric current and reference voltage that are compensated for temperature and power-supply voltage fluctuations, enabling low distortion and high speed in negative-feedback amplifiers, and reducing circuit area and current consumption.
Implementation Method 1
a first electric-current generator circuit generating a first electric current having a positive temperature coefficient
Implementation Method 2
a second electric-current generator circuit generating a second electric current having a negative temperature coefficient
Data Source
AI summary
A semiconductor device includes: a first electric-current generator circuit generating a first electric current having a positive temperature coefficient and not having dependency on a first power-supply voltage; a second electric-current generator circuit generating a second electric current having a negative temperature coefficient and not having dependency on the first power-supply voltage; and a third electric-current generator circuit generating a third electric current neither having dependency on the temperature nor the first power-supply voltage, based on the first electric current and the second electric current.