Reference Voltage Circuit with MOSFET Gate Tuning for Temperature Accuracy
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Solution Overview
Problem
Existing reference voltage circuits face challenges in accurately adjusting temperature characteristics due to differences between simulation models and actual devices, particularly in the PTAT voltage generation, making process portability difficult and fine adjustments impractical.
Innovation Solution
A reference voltage circuit incorporating a PTAT voltage generation circuit, a CTAT voltage generation circuit, and a temperature characteristic adjustment circuit, where the adjustment circuit adjusts the gate voltage difference between paired MOSFETs to fine-tune the temperature characteristics, allowing for a wide adjustment range and precise control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the gate voltage difference of MOSFETs is used to generate PTAT voltage in multiple stages, then area and current consumption are reduced, but the temperature characteristics cannot be finely adjusted due to process variations
Solution Approach 1:
The patent introduces a dynamic adjustment mechanism by adding a control terminal to the MOSFET structure. This allows the gate voltage difference to be dynamically adjusted via an external control signal, enabling fine-tuning of the PTAT voltage generation to compensate for process variations and achieve accurate temperature characteristics while maintaining low power consumption operation.
Solution Approach 2:
The patent changes the electrical parameters of the MOSFET by introducing a controllable gate voltage adjustment mechanism. By varying the gate voltage difference through the control terminal, the PTAT voltage generation characteristics can be tuned to achieve precise temperature compensation despite manufacturing process variations.
2Ease of manufacture
If simulation model parameters are used for design, then design process is simplified, but temperature characteristics deviate from actual device performance
Solution Approach 1:
The patent implements a feedback mechanism where the temperature characteristics are measured or monitored and the control terminal adjusts the gate voltage difference accordingly. This closed-loop approach allows the circuit to self-correct for deviations between simulation models and actual device performance, achieving accurate temperature compensation without complicating the design process.
Solution Approach 2:
The patent performs preliminary characterization of the actual device temperature characteristics and uses this information to set initial control parameters. This preliminary action bridges the gap between simulation models and actual devices, allowing the circuit to start with optimized parameters that account for process variations.
3Productivity
If multiple stages of MOSFET gate voltage difference are connected to generate PTAT voltage, then voltage generation efficiency is improved, but adjustment range is limited and fine adjustment becomes impractical
Solution Approach 1:
The patent transforms the static multi-stage MOSFET configuration into a dynamic system by adding the control terminal. This allows the gate voltage difference in each stage to be independently or collectively adjusted, expanding the adjustment range while maintaining the efficiency benefits of the multi-stage architecture. The control signal can vary the overall PTAT voltage output to achieve fine adjustments.
Solution Approach 2:
The control terminal serves multiple functions: it can adjust the gate voltage difference to expand the adjustment range, maintain the efficient multi-stage voltage generation, and enable fine-tuning of temperature characteristics. This single additional element provides universal control over the PTAT voltage generation process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables effective adjustment of temperature characteristics, improving the accuracy and portability of the reference voltage circuit, allowing for precise temperature compensation and reduced power consumption.
Implementation Method 1
a PTAT voltage generation circuit that generates a voltage with a positive temperature coefficient
Implementation Method 2
a CTAT voltage generation circuit that generates a voltage with a negative temperature coefficient
Implementation Method 3
the adjustment circuit adjusts the gate voltage difference between paired MOSFETs to fine-tune the temperature characteristics
Data Source
AI summary
A reference voltage circuit (1) includes a PTAT voltage generation circuit (20) that generates a voltage with a positive temperature coefficient, a CTAT voltage generation circuit (10) that generates a voltage with a negative temperature coefficient, and a temperature characteristic adjustment circuit (30) that generates a voltage for adjusting temperature characteristics. The reference voltage circuit outputs a reference voltage (VOUT) formed by calculation based on the output of the PTAT voltage generation circuit, output of the CTAT voltage generation circuit, and output of the temperature characteristic adjustment circuit.