Reflective Electrodes in Semiconductor Light Emitting Devices
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Solution Overview
Problem
Semiconductor light emitting devices face inefficiencies due to light absorption by electrodes, limiting their brightness and overall light emitting efficiency.
Innovation Solution
The implementation of a semiconductor light emitting device structure featuring a first and second semiconductor layer with an active layer in between, along with first and second reflective electrodes on each layer to prevent light absorption, where at least one electrode is divided into multiple electrodes to enhance light reflection and emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If reflective electrodes are added to prevent light absorption, then light emitting efficiency is improved, but device complexity increases
Solution Approach 1:
The device is segmented into distinct functional layers including first and second semiconductor layers, an active layer, and multiple reflective electrodes positioned at specific locations. This segmentation allows each component to perform its specialized function efficiently while maintaining overall system performance.
Solution Approach 2:
Reflective electrodes are introduced as intermediary elements between the light source (active layer) and the external environment. These electrodes mediate the light propagation by reflecting photons that would otherwise be absorbed, thereby improving light extraction efficiency without requiring fundamental changes to the semiconductor material properties.
2Illumination intensity
If high-power light emitting devices are developed to meet increasing brightness demand, then illumination intensity is improved, but heat generation and energy loss increase
Solution Approach 1:
The reflective electrodes convert harmful light absorption (energy loss) into beneficial light reflection (useful output). By positioning reflective electrodes to intercept and redirect photons that would be absorbed by electrodes or surrounding structures, the device transforms potential energy waste into additional useful light emission, thereby improving overall efficiency even in high-power operation modes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves light emitting efficiency by reflecting light generated from the active layer, increasing brightness and applicability to both low and high-power devices.
Implementation Method 1
a first reflective electrode on the first semiconductor layer to reflect incident light; and a second reflective electrode on the second semiconductor layer to reflect the incident light
Data Source
AI summary
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light.