Reflective Inspection Layer for Optical Via Defect Detection

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Solution Overview

Problem

Conventional optical techniques struggle to detect defects in micron-sized to nano-sized via structures and interconnect structures in semiconductor devices, due to difficulties in illuminating and imaging these small features effectively.

Innovation Solution

The formation of an inspection layer on dielectric layers increases the reflectivity and contrast of via structures, allowing for more accurate optical detection of defects. This inspection layer can be composed of electrically conductive materials or formed through exposure to specific gases, enhancing the visibility of defects within the via structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional optical techniques are used to inspect via structures, then the inspection process is simple, but the defect detection capability is insufficient for micron-sized to nano-sized features

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidinspection process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

An inspection layer is deposited over the via structures to serve as an intermediary that enhances optical contrast. This layer has different optical properties than the surrounding dielectric material, creating visible contrast at defect locations such as bridging defects, enabling optical detection of sub-resolution features without requiring complex nanoscale imaging equipment

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The inspection layer is designed to exhibit optical contrast (analogous to color changes in visual terms) at defect locations. When light interacts with the inspection layer over a via structure containing a defect, the optical properties change, creating a detectable signal that distinguishes defective areas from normal areas, thereby improving measurement precision for defect detection

Inventive Principle:
Principle #32Color changes

2Productivity

If via structures are made smaller to increase device density, then productivity increases, but the difficulty of detecting and measuring defects increases

Engineering Contradiction:
Improvedevice densityVSAvoiddefect detection difficulty
Core Design Contradiction:
ProductivityVSDifficulty of detecting and measuring

Solution Approach 1:

The inspection layer acts as an optical mediator that amplifies the optical signal from sub-resolution via structures. By depositing this layer with specific optical properties, defects in smaller via structures produce enhanced contrast signals that can be detected by conventional optical systems, maintaining defect detection capability as device density increases

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The inspection layer changes the optical parameters (reflectivity, absorption, scattering) of the via structure assembly. This parameter change transforms the optical response of sub-resolution features into a detectable signal range, allowing smaller via structures to be inspected with standard optical equipment rather than requiring more complex measurement systems

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The improved optical inspection techniques using inspection layers enhance defect detection rates, increase fabrication yields, and reduce production costs by allowing for more precise imaging and identification of defects in semiconductor devices.

Implementation Method 1

The inspection layer may increase the reflectivity of the dielectric layer and/or via structures

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS12281991B2Inspection layer to improve the detection of defects through optical systems and methods of inspecting semiconductor device for defects
Publication Date: 2025.04.22 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12281991B2 patent drawing
  • US12281991B2 patent drawing
  • US12281991B2 patent drawing

AI summary

A semiconductor device inspection method including: depositing a dielectric material over a substrate to form an interconnect-level dielectric (ILD) layer; patterning the ILD layer to form via structures in the ILD layer; depositing an electrically conductive material to form an inspection layer on the ILD layer and in the via structures; optically inspecting light reflected from the inspection layer to generate image data; and detecting any defects in the via structures by analyzing the image data.