Reflective Lithography Mask Reflectivity Correction
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Solution Overview
Problem
Reflective lithography masks in semiconductor technology often exhibit non-ideal properties, leading to optical errors and suboptimal lithographic images due to manufacturing defects, necessitating a method to correct their reflectivity for improved performance.
Innovation Solution
A method involving the application of specific electromagnetic radiation to modify the reflectivity of reflective lithography masks by inducing material changes within the mask, such as altering the density or composition of the reflective multilayer stack, allowing for precise tuning of reflectivity to correct lithographic images.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a reflective lithography mask is used to enable smaller structure generation, then the resolution and capability for generating smaller structures is improved, but mask errors and non-ideal mask properties are introduced that result in optical errors in the lithographic image
Solution Approach 1:
The patent applies electromagnetic radiation (such as electron beams or photons) to locally modify the physical or chemical parameters of the mask material at error locations. This changes the optical properties (absorption, reflection, transmission) of specific regions to compensate for manufacturing defects and correct optical errors in the lithographic image
Solution Approach 2:
The patent replaces mechanical correction methods with electromagnetic field-based correction. Instead of physically adjusting or replacing the mask, electromagnetic radiation is used to induce material changes that correct the optical errors, enabling non-contact and precise correction
2Reliability
If the mask properties are modified to correct lithographic errors, then the lithographic image quality is improved, but the mask structure and composition are altered
Solution Approach 1:
The patent applies corrections locally at specific error locations rather than modifying the entire mask. The electromagnetic radiation is targeted at precise coordinates to induce material changes only where needed, preserving the overall mask composition while correcting local defects
Solution Approach 2:
The patent applies partial modification to the mask by only treating the affected areas with electromagnetic radiation. This partial action approach modifies only the necessary portions of the mask to correct errors without altering the entire mask structure or composition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the correction of reflective lithography masks by modifying their reflectivity, improving the quality of lithographic images by adapting the mask's properties to specific exposure wavelengths, thereby enhancing the precision and accuracy of semiconductor structure generation.
Implementation Method 1
applying a first electromagnetic radiation to the mask to evoke a first material change within the mask which modifies a reflectivity of the mask
Data Source
AI summary
The present disclosure relates to a method for correcting a reflective lithography mask, wherein the mask comprises a substrate and a reflective multilayer stack, the method comprising: applying a first electromagnetic radiation to the mask to evoke a first material change within the mask which modifies a reflectivity of the mask. The present disclosure further relates to an apparatus for correcting a reflective lithography mask and a reflective lithography mask.