Reflective Micro-LED Structure for High Brightness at Low Power
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Solution Overview
Problem
Existing display devices face challenges in achieving high-brightness image display while operating at low power consumption, particularly in micro display devices used in electronic devices like augmented and virtual reality devices, due to limitations in light emitting diode (LED) efficiency and display quality.
Innovation Solution
The LED structure includes a reflective first electrode layer, a semiconductor layer with protruding sub-semiconductor layers, a second electrode layer with sub-electrodes, and a protective layer, utilizing materials like gallium nitride and indium gallium nitride for improved light emission, along with optical control layers and insulating layers to enhance light efficiency and display quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional LED structures are used in micro display devices, then device complexity is reduced, but light efficiency and display quality deteriorate
Solution Approach 1:
The semiconductor layer is divided into multiple sub-semiconductor layers (first, second, and third sub-semiconductor layers) with different orientations and functions. Each sub-layer is segmented to perform specific roles in light emission and extraction, improving overall light efficiency while maintaining manageable device complexity through modular architecture
Solution Approach 2:
Different regions of the LED structure are assigned different properties: the first sub-semiconductor layer has a first orientation for light emission, the second sub-semiconductor layer has a second orientation for enhanced light extraction, and the third sub-semiconductor layer has a third orientation. This local differentiation optimizes light efficiency in specific regions without requiring complete structural redesign
2Ease of manufacture
If conventional LED structures are used, then manufacturing process is simpler, but display quality and light efficiency deteriorate
Solution Approach 1:
The semiconductor layer is divided into multiple sub-semiconductor layers (first, second, and third sub-semiconductor layers) with different orientations and functions. Each sub-layer is segmented to perform specific roles in light emission and extraction, improving overall light efficiency while maintaining manageable device complexity through modular architecture
Solution Approach 2:
The patent introduces vertical stacking of multiple sub-semiconductor layers with different orientations (first, second, and third orientations), adding a vertical dimension to the traditionally planar LED structure. This multi-dimensional approach enhances light extraction efficiency and display quality without fundamentally complicating the manufacturing process
3Illumination intensity
If high-brightness display is achieved, then image quality improves, but power consumption increases
Solution Approach 1:
The patent converts what would normally be wasted light (harmful factor) into useful output by incorporating multiple sub-semiconductor layers with different orientations that extract and emit light in multiple directions. This transforms potential energy loss into additional useful light output, achieving high brightness with lower power consumption
Solution Approach 2:
The patent changes the structural parameters of the semiconductor layer by introducing multiple sub-layers with different orientations and properties. This parameter modification enables more efficient light emission and extraction, allowing high brightness output with reduced energy input compared to conventional single-layer structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed LED structure enhances light efficiency and display quality, allowing for high-brightness image display at low power consumption, particularly in micro display devices used in electronic devices.
Implementation Method 1
a first electrode layer including a reflective material
Implementation Method 2
utilizing materials like gallium nitride and indium gallium nitride for improved light emission
Data Source
AI summary
Disclosed is a light emitting diode which includes a first electrode layer including a reflective material, a semiconductor layer disposed on the first electrode layer and including a plurality of light emitting members spaced apart from each other, a second electrode layer including a plurality of sub-electrodes disposed on the plurality of light emitting members, respectively, and a protective layer covering the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a base semiconductor layer disposed on the first electrode layer and a plurality of sub-semiconductor layers protruding from the base semiconductor layer, a plurality of active layers disposed on the plurality of sub-semiconductor layers, respectively, and a plurality of active layers disposed on the plurality of sub-semiconductor layers, respectively. The plurality of sub-electrodes are disposed on the plurality of second semiconductor layers, respectively.