Reflective Inspection Layer for Optical Detection of Via Defects

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Solution Overview

Problem

Conventional optical techniques struggle to effectively inspect micron-sized to nano-sized via structures in semiconductor devices due to difficulties in detecting defects such as unusual profiles, residues, or by-products at the bottom of via structures, which are hard to detect using conventional methods.

Innovation Solution

The implementation of an inspection layer on dielectric layers that increases the reflectivity and contrast of via structures, allowing for improved optical detection of defects through enhanced imaging techniques, including the use of conductive materials or inspection gases to form the inspection layer and optical systems for defect identification.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional optical techniques are used to inspect via structures, then the inspection process is simple, but the defect detection capability is insufficient for micron-sized to nano-sized structures

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidinspection process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent introduces an inspection layer as an intermediary between the optical system and the via structures. This layer contains inspection features that mediate the optical interaction, enabling enhanced defect detection. The inspection layer acts as a mediator that converts subtle defects into detectable optical signals without requiring direct high-resolution imaging of the tiny via structures themselves.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the optical parameters of the inspection system by introducing the inspection layer with specific optical properties. The layer modifies reflectivity, contrast, and other optical parameters to enhance the detectability of defects. By changing these parameters through the inspection layer, the system achieves superior defect detection capability for sub-micron structures.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If an inspection layer is added to enhance defect detection, then defect detection accuracy improves, but the manufacturing process complexity increases

Engineering Contradiction:
Improvedefect detection accuracyVSAvoidmanufacturing process simplicity
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The inspection layer is formed as a preliminary action before the via structures are completely finalized. By preparing the inspection layer in advance with embedded inspection features, the system enables subsequent easy detection of defects. This preliminary preparation simplifies the overall manufacturing flow by separating the inspection preparation from the final via formation steps.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The inspection layer serves as an intermediary element that simplifies the manufacturing process by providing a dedicated structure for defect detection. Rather than attempting to directly inspect complex via structures, the process uses the inspection layer as a simplified intermediate target that is easier to manufacture and inspect, thereby improving overall ease of manufacture.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If conventional inspection methods are used, then the process is fast and simple, but the ability to detect defects at the bottom of via structures is poor

Engineering Contradiction:
Improvedefect detection reliabilityVSAvoidinspection system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent transitions from direct two-dimensional imaging of via structures to a different dimensional approach by using the inspection layer. The inspection features in the layer provide an additional dimensional reference that enables detection of defects at the bottom of via structures. This dimensional change allows optical systems to detect subsurface defects that would be invisible in direct imaging.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The inspection layer acts as a mediator that translates three-dimensional via structure defects into two-dimensional detectable patterns. By introducing this intermediate layer, the system achieves reliable defect detection at the bottom of via structures without requiring complex three-dimensional imaging capabilities, thus balancing reliability with manageable system complexity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances defect detection rates, increases fabrication yields, and reduces production costs by enabling more accurate inspection of via structures, even at small sizes.

Implementation Method 1

The inspection layer 250 may be configured to increase the reflectivity of the dielectric layer 230 and/or via structures 232V

Methodology Applied
Scientific EffectReflectivity: Reflection

Implementation Method 2

The inspection layer 250 may be configured to increase the contrast between via structures 232V that include defects 205 and via structures 232V that do not include defects

Methodology Applied
Scientific EffectContrast enhancement: Reflection

Data Source

PatentUS11761905B2Inspection layer to improve the detection of defects through optical systems and methods of inspecting semiconductor device for defects
Publication Date: 2023.09.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11761905B2 patent drawing
  • US11761905B2 patent drawing
  • US11761905B2 patent drawing

AI summary

A semiconductor device inspection method including: depositing a dielectric material over a substrate to form an interconnect-level dielectric (ILD) layer; patterning the ILD layer to form via structures in the ILD layer; depositing an electrically conductive material to form an inspection layer on the ILD layer and in the via structures; imaging the inspection layer to generate image data; and detecting any defects in the via structures by analyzing the image data.