Reflector Coolant Slot Bias for Reaction Chamber Wall Cooling
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Solution Overview
Problem
Existing film deposition processes in semiconductor processing systems face challenges with film deposition on reactor walls, leading to increased reactor wall temperature, reduced transmissivity, and potential contamination or chamber failure due to devitrification, especially during long-duration or high-temperature operations.
Innovation Solution
A reflector system with a grooved surface and reflective surface is used to distribute coolant effectively across the reaction chamber, featuring elongated and shortened slots to bias coolant flow and maintain uniform temperature, reducing the risk of film deposition on interior surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If coolant is provided to the exterior of the reactor during film deposition, then the reactor wall temperature is maintained below the deposition temperature, but film may still deposit on interior surfaces due to localized temperature increases
Solution Approach 1:
The patent applies local quality by providing non-uniform coolant flow distribution across the reactor wall. The coolant flow rate is varied at different locations to compensate for localized temperature increases caused by flow patterns, ensuring each region maintains appropriate temperature to prevent film deposition while allowing the substrate to reach deposition temperature.
2Productivity
If film deposition operations are extended to long durations or high temperatures, then thicker epitaxial layers can be deposited, but reactor wall devitrification and chamber failure may occur
Solution Approach 1:
The patent applies preliminary action by pre-cooling the reactor wall regions before film deposition begins. The coolant system is activated and adjusted to establish appropriate temperature distribution across the reactor wall prior to introducing the precursor, preventing the wall temperature from rising to devitrification levels during extended or high-temperature deposition operations.
3Reliability
If the substrate is removed and returned to the reactor for multiple deposition events, then film deposition on interior walls can be removed, but processing time is increased
Solution Approach 1:
The patent applies continuity of useful action by maintaining continuous coolant flow and appropriate temperature control throughout the reactor wall during extended deposition operations. This eliminates the need to interrupt the deposition process to remove film from interior walls, allowing continuous deposition of thick epitaxial layers without reactor wall contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reflector system maintains peak interior surface temperatures below critical levels, preventing devitrification and chamber failure, while enhancing cooling efficiency and reducing temperature variation.
Implementation Method 1
a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body
Implementation Method 2
The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened slots extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber
Data Source
AI summary
A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.