Register with Non-Volatile Memory for Data Backup
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Solution Overview
Problem
Existing memory registers face challenges in providing fast data access while ensuring non-volatile storage without significant increases in area or power consumption.
Innovation Solution
A register design that combines volatile and non-volatile memory cells, where volatile cells are serially connected and non-volatile cells use programmable resistive elements for data storage, allowing for serial data transfer during save and restore operations, with control circuits managing the data flow between volatile and non-volatile memory.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If non-volatile memory is added to provide data retention without power, then data retention capability is improved, but device complexity and area increase
Solution Approach 1:
The patent combines volatile and non-volatile memory cells into a unified register structure, where the non-volatile memory cells are integrated alongside the volatile memory cells. This merging allows the system to maintain data retention capability while sharing common control and read/write circuits, thereby reducing overall device complexity compared to separate volatile and non-volatile memory systems.
Solution Approach 2:
The common read circuit and control logic serve dual purposes by supporting both volatile and non-volatile memory operations. The same control signals and circuitry manage data writing to and reading from both memory types, eliminating the need for separate dedicated circuits for each memory type and reducing overall system complexity.
2Reliability
If non-volatile memory is added to provide data retention without power, then data retention capability is improved, but area consumption increases
Solution Approach 1:
The patent merges volatile and non-volatile memory cells into a compact integrated structure where both memory types share the same physical substrate and common circuitry. This consolidation reduces the total area required compared to implementing separate volatile and non-volatile memory systems, as overlapping functions (control logic, read circuits) are shared rather than duplicated.
Solution Approach 2:
The common read circuit and control logic serve dual purposes by supporting both volatile and non-volatile memory operations. The same control signals and circuitry manage data writing to and reading from both memory types, eliminating the need for separate dedicated circuits for each memory type and reducing overall system complexity.
3Use of energy by moving object
If serial data transfer is used between volatile and non-volatile memory, then power consumption is reduced, but data access speed decreases
Solution Approach 1:
The patent segments memory operations into distinct phases: volatile memory is used for high-speed data access during active operation, while non-volatile memory is used for data retention during idle or low-power states. This segmentation allows the system to optimize for speed when needed and for power savings when not actively accessing data, rather than attempting to simultaneously optimize both conflicting requirements in a single memory type.
Solution Approach 2:
The system dynamically switches between using volatile and non-volatile memory based on operational requirements. During active data processing, the volatile memory is accessed for high-speed operations. During low-power or idle states, data is transferred to and from non-volatile memory. This dynamic operation allows the system to adapt its performance and power consumption characteristics to match actual workload demands.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient data storage and retrieval with low power consumption and compact circuitry, maintaining data integrity even when power is cut off, by leveraging serial connections and programmable resistive elements in non-volatile memory cells.
Implementation Method 1
various types of magnetoresistive elements have been proposed, some of which can be programmed by the direction of a current which is passed through the element
Implementation Method 2
An example of such a current-programmable magnetoresistive element is a magnetic tunnel junction having a write mechanism based on the STT (spin transfer torque) technique
Data Source
Figure 1~2
Figure 3~5
Figure 6~7B
AI summary
The invention relates to a register comprising: a plurality of volatile memory cells (104-107) each including a first input and an output, the volatile memory cells being coupled in series among one another via the first inputs and the outputs thereof; non-volatile memory (103) comprising a plurality of non-volatile memory cells; and one or more serial connections (110, 112, 114) suitable for performing at least one of the following functions: serially supplying the non-volatile memory (103) with data to be written in the non-volatile memory (103) from a last one or another one of the volatile memory cells during an operation to backup data stored by the volatile memory cells; and serially supplying data read from the non-volatile memory (103) to a first one of the volatile memory cells (204) during an operation to restore data stored by the volatile memory cells.