Reinforced Display Layer Layout for Impact-Resistant Transistors
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Solution Overview
Problem
Display devices face challenges in durability due to structural weaknesses and vulnerabilities to external impacts, which can affect the longevity and reliability of the components.
Innovation Solution
The display device incorporates a reinforcing layer with specific transistor configurations, including polysilicon and oxide semiconductor patterns, and a metal reinforcing layer that overlaps certain transistors to enhance structural integrity and durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional structure without a reinforcing layer is used, then the device complexity is low, but the durability and resistance to external impacts are poor
Solution Approach 1:
The reinforcing layer is disposed on the base layer before the transistor layers are formed, providing preemptive structural support to the regions that will contain transistors. This preliminary reinforcement prevents structural failures before they occur during device operation or under external impact.
Solution Approach 2:
The reinforcing layer is made of a material different from the base layer, creating a composite structure that combines the properties of both materials. This composite approach enhances the overall durability and impact resistance while maintaining the electrical functionality of the transistor layers.
2Reliability
If the reinforcing layer overlaps all transistors, then the durability is maximized, but the manufacturing complexity and process difficulty increase
Solution Approach 1:
The reinforcing layer is selectively disposed to overlap only specific transistors (first, second, fifth, sixth, and seventh transistors) rather than all transistors uniformly. This local reinforcement approach targets critical regions that require enhanced durability while simplifying the manufacturing process by reducing the complexity of patterning the reinforcing layer across the entire device.
Data Source
AI summary
A display device includes a base layer, a circuit layer including a reinforcing layer disposed on the base layer and transistors disposed on the reinforced layer, where each of the transistors includes a semiconductor pattern including a source, an active, a drain, and a gate, and a display layer including a light-emitting diode connected to the transistors, where the reinforcing layer overlaps three or more actives among actives of the transistors. Some of semiconductor patterns of the transistors include polysilicon, others of the semiconductor patterns of the transistors include oxide, and a distance from the reinforcing layer to a semiconductor pattern including the polysilicon is shorter than a distance from the reinforcing layer to a semiconductor pattern including the oxide.