Reinforced Insulative Stack Structures for Tier Collapse Prevention
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Solution Overview
Problem
Microelectronic device designers face challenges in maintaining the rigidity of vertical memory array structures during fabrication, particularly after 'replacement gate' processing, leading to undesirable collapse of tiers due to reduced dimensions and unsupported structures.
Innovation Solution
Incorporating intermediate regions within insulative structures, doped with chemical species like carbon and boron, to enhance rigidity and strength, thereby preventing tier collapse during sacrificial structure removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If dimensions of insulative structures are reduced to increase integration density, then device integration density is improved, but structural rigidity deteriorates leading to tier collapse
Solution Approach 1:
The insulative structure is formed as a composite material system with multiple layers having different mechanical properties. The first insulative material layer provides baseline insulation, while the second insulative material layer with different composition and properties provides enhanced rigidity and structural support. This composite approach allows the overall structure to maintain sufficient rigidity even when total dimensions are reduced for higher integration density.
Solution Approach 2:
The patent applies local quality by creating regions with different material compositions within the insulative structure. The second insulative material layer is strategically positioned to provide localized reinforcement where structural support is most needed during fabrication processing, while other regions maintain optimized dimensions for high integration density. This allows different parts of the structure to have different properties optimized for their specific functions.
2Manufacturing precision
If thickness of insulative structures is reduced to increase feature density, then manufacturing precision is improved, but structural stability deteriorates during replacement gate processing
Solution Approach 1:
The multi-layer insulative structure with different material compositions provides enhanced structural stability during replacement gate processing. The second insulative material layer is specifically designed with properties that maintain structural integrity during the sacrificial structure removal process, preventing collapse while allowing the overall feature dimensions to be reduced for higher precision and density.
3Volume of moving object
If dimensions are reduced to increase integration, then device compactness is improved, but structural support capability deteriorates leading to collapse during sacrificial structure removal
Solution Approach 1:
The composite insulative structure maintains structural support capability despite reduced overall dimensions. The second insulative material layer provides localized structural reinforcement that prevents collapse during sacrificial structure removal, enabling the device to achieve compact form factor while maintaining necessary mechanical strength during fabrication.
Solution Approach 2:
The patent implements local quality by positioning the second insulative material layer to provide structural support precisely where needed during the critical sacrificial structure removal process. This localized reinforcement allows the rest of the structure to be optimized for compactness while maintaining overall structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The enhanced rigidity of insulative structures maintains their shape during processing, preventing undesirable collapse and ensuring consistent structure integrity.
Implementation Method 1
The dopant may include carbon, boron, or a combination thereof. The dopant may increase a rigidity of the insulative structure, such that the insulative structure maintains its shape when the sacrificial structure is removed
Data Source
AI summary
A microelectronic device includes a stack structure including insulative structures and conductive structures vertically alternating with the insulative structures. At least one of the insulative structures includes interfacial regions proximate interfaces between the at least one of the insulative structures and two of the conductive structures vertically neighboring the at least one of the insulative structures; and an intermediate region interposed between the interfacial regions. The intermediate region has a different material composition and relatively greater strength than the interfacial regions.


