Reinforced Silicon Nitride Mask for High-Resolution Panel Patterning

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Solution Overview

Problem

Existing masks used in the manufacturing of high-resolution display panels are prone to damage due to their high brittleness, which becomes more pronounced as the resolution increases and the thickness of the silicon nitride layers decreases.

Innovation Solution

The introduction of a mask structure comprising a first silicon nitride layer with a first pattern, a reinforcing layer having a second pattern corresponding to the first pattern, and optionally a base layer and a second silicon nitride layer, where the reinforcing layer is made of a material with lower brittleness, such as photosensitive polyimide, to enhance the mask's durability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the thickness of the silicon nitride layer is decreased to achieve higher resolution patterns, then the manufacturing precision is improved, but the strength and durability of the mask deteriorates

Engineering Contradiction:
Improvepattern precisionVSAvoidmask strength
Core Design Contradiction:
Manufacturing precisionVSStrength

Solution Approach 1:

The mask structure combines silicon nitride layers (for precise patterning) with reinforcing layers made of materials having lower brittleness (for enhanced strength). This composite structure allows the mask to maintain both high manufacturing precision for fine patterns and sufficient strength to prevent damage during the patterning process.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If the thickness of the silicon nitride layer is decreased to achieve higher resolution patterns, then the manufacturing precision is improved, but the reliability of the mask deteriorates

Engineering Contradiction:
Improvepattern precisionVSAvoidmask reliability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The mask structure combines silicon nitride layers (for precise patterning) with reinforcing layers made of materials having lower brittleness (for enhanced strength). This composite structure allows the mask to maintain both high manufacturing precision for fine patterns and sufficient strength to prevent damage during the patterning process.

Inventive Principle:
Principle #40Composite materials

3Strength

If a reinforcing layer is added to the mask structure to reduce brittleness, then the strength is improved, but the device complexity increases

Engineering Contradiction:
Improvemask strengthVSAvoidmask structure complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The mask is divided into functionally distinct layers: silicon nitride layers that provide precise patterning capabilities and reinforcing layers that provide mechanical strength. This segmentation allows each layer to be optimized for its specific function while working together as an integrated structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The mask structure combines silicon nitride layers (for precise patterning) with reinforcing layers made of materials having lower brittleness (for enhanced strength). This composite structure allows the mask to maintain both high manufacturing precision for fine patterns and sufficient strength to prevent damage during the patterning process.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS20260002245A1Mask for manufacturing display panel, and electronic device having the display panel
Publication Date: 2026.01.01 SAMSUNG DISPLAY CO LTD
  • US20260002245A1 patent drawing
  • US20260002245A1 patent drawing
  • US20260002245A1 patent drawing

AI summary

A mask includes a first silicon nitride layer and a first reinforcing layer, where the first silicon nitride layer has a first pattern for deposition of a display panel. The first reinforcing layer is formed on the first silicon nitride layer and has a second pattern corresponding to the first pattern, where a brittleness of the first reinforcing layer is lower than a brittleness of the first silicon nitride layer.