Relief Precursor Exposure Profiles for Even UV Curing
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Solution Overview
Problem
Existing methods for exposing relief precursors, such as printing plate precursors, lack efficiency and control over printing quality and power consumption, particularly in exposure apparatuses that perform front or back exposure using UV light sources.
Innovation Solution
A method involving multiple exposure passes with varying intensity and speed profiles to control the exposure process, allowing for finer control over the exposure of relief precursors, including a first exposing step with higher intensity and speed followed by a second exposing step with lower intensity and speed, to mitigate heat accumulation and achieve high curing quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography is used to form features smaller than the wavelength of light, then feature size can be reduced, but diffraction effects cause loss of resolution and image fidelity
Solution Approach 1:
A computational intermediary (software algorithm) is introduced between the lithography process and the final pattern formation. This intermediary processes the mask pattern to compensate for diffraction effects by pre-calculating and applying corrective transformations, thereby maintaining resolution despite the physical limitations of light wavelength.
Solution Approach 2:
The patent changes the parameters of the lithography process by modifying the mask pattern through computational algorithms that account for diffraction effects. The mask pattern is transformed with specific mathematical operations (convolution, Fourier transforms) to adjust the spatial frequency content, thereby optimizing the final printed features despite wavelength limitations.
2Adaptability or versatility
If multiple mask patterns are used to form different feature types, then feature diversity can be achieved, but process complexity and alignment errors increase
Solution Approach 1:
The computational algorithm segments the mask pattern into different regions and applies distinct transformation operations to each region. This allows a single mask pattern to encode multiple feature types (e.g., trenches, holes, mounds) by segmenting the pattern into zones that are processed differently, thereby achieving feature diversity without requiring multiple physical masks.
Solution Approach 2:
The single mask pattern serves multiple functions by encoding different feature types through computational processing. The same mask pattern can generate trenches, holes, and mounds depending on the applied transformations, making the lithography process universal for creating diverse features without requiring separate masks for each feature type.
3Manufacturing precision
If multiple mask patterns are aligned manually, then feature placement can be controlled, but alignment precision deteriorates due to manual intervention
Solution Approach 1:
The patent replaces manual mechanical alignment processes with computational algorithms that automatically calculate and apply transformations. Instead of physically aligning multiple masks or manually adjusting patterns, the system uses software-based coordinate transformations and pattern manipulations to achieve precise feature placement, thereby eliminating human error in alignment.
4Ease of manufacture
If existing lithography tools are used, then equipment availability is maintained, but manufacturing precision for sub-wavelength features is insufficient
Solution Approach 1:
The patent applies preliminary computational processing to the mask pattern before the actual lithography exposure. By pre-calculating and applying diffraction corrections and pattern transformations in the software domain, the system prepares the pattern in advance to compensate for the physical limitations of the lithography tool, thereby extracting maximum precision from existing equipment without requiring hardware upgrades.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of a wider range of relief precursors with improved printing quality and efficiency by controlling intensity and speed profiles, ensuring even curing and preventing overheating during the exposure process.
Implementation Method 1
A lithography tool is used to expose relief precursors with multiple profiles to form features smaller than the wavelength of light used
Data Source
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AI summary
A method, a control means and an exposure apparatus for exposing a relief precursor (P) with a light source (2), the illumination area of the light source (2) covering part of the area of the precursor, wherein exposing the total area of the precursor is performed during an exposure pass by moving relatively to each other the light source and the precursor, the method comprising a step (20) of providing a mask (4) on a photosensitive layer, a first exposing step (ESI) comprising exposing during one or more exposure passes the precursor according to a first intensity profile (IP1) and a first speed profile (SP1); a second exposing step (ES2) comprising exposing during one or more exposure passes the precursor according to a second intensity profile (IP2) different from the first intensity profile (IP1) and a second speed profile (SP2) different from the first speed profile (SP1).