Remote Plasma Gas Supply for Faster ALD Without Substrate Damage
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in increasing gas adsorption and deposition rates, particularly when using remote plasma, which can lead to plasma damage on the substrate and inefficient thin film formation.
Innovation Solution
The apparatus incorporates a gas supply device with a top plate and shower heads, an RF power device to form remote plasma in a separate reaction space, and a bias power supply unit to selectively apply bias voltage to the susceptor or shower heads, enhancing gas adhesion and deposition rates during atomic layer deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If remote plasma is used to activate gas for thin film deposition, then gas adsorption rate and deposition rate can be increased, but plasma damage may occur on the substrate
Solution Approach 1:
The gas supply device is divided into multiple portions with different electrical connections. Some portions are connected to RF power to generate remote plasma, while other portions remain at ground potential. This segmentation allows the system to deliver activated gas species to the substrate without exposing it to damaging plasma conditions, thereby increasing deposition rate while preventing plasma damage.
Solution Approach 2:
The patent uses an intermediary approach by creating remote plasma in a separate reaction space away from the substrate, then transporting the activated gas species to the substrate through a plasma-free path. This allows gas activation to occur without direct plasma contact with the substrate, resolving the contradiction between achieving high deposition rates and avoiding plasma damage.
2Productivity
If bias voltage is applied to enhance gas adhesion, then gas adsorption rate increases, but process control complexity increases
Solution Approach 1:
The patent applies local quality by selectively applying bias voltage to specific portions of the gas supply device or susceptor rather than uniformly across the entire system. This localized application enhances gas adhesion at critical interfaces while maintaining simpler control requirements for the overall process, as bias is only applied where needed to improve adsorption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves gas adsorption and deposition rates, allowing for efficient thin film processing on substrates, including materials with low adsorption factors, and supports high aspect ratio patterning and improved thin film quality.
Implementation Method 1
an RF power device configured to supply RF power to at least a portion of the gas supply device in order to form remote plasma in a reaction space in the gas supply device
Implementation Method 2
a bias power supply unit configured to selectively apply a bias voltage to another portion of the gas supply device or the susceptor... by generating the remote plasma and selectively applying a bias voltage, it is possible to increase a gas adhesion rate and increase a deposition rate
Data Source
AI summary
An apparatus for processing a substrate according to one aspect of the present disclosure includes: a chamber including a processing space in which the substrate is accommodatable and processible; a susceptor coupled to the chamber to support the substrate in the processing space; a gas supply device that is installed in the upper portion of the chamber and supplies a gas toward the susceptor; an RF power device configured to supply RF power to at least a portion of the gas supply device in order to form remote plasma in a reaction space in the gas supply device; and a bias power supply unit configured to selectively apply a bias voltage to another portion of the gas supply device or the susceptor.