Remote Plasma ALD Chamber Layout for Uniform Large-Substrate Deposition
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Solution Overview
Problem
Existing plasma apparatuses for atomic layer deposition apparatuses fail to effectively address the issue of uneven plasma generation and gas distribution, leading to quality deterioration of thin films on larger substrates due to differences in gas injection and plasma density.
Innovation Solution
A batch-type apparatus for atomic layer deposition that generates remote plasma between a showerhead and a cassette, utilizing a gas distribution electrode and power supply means to create uniform plasma conditions for substrates, ensuring uniform gas distribution and plasma generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrates increase in size and area, then more substrates can be processed simultaneously improving productivity, but gas injection amounts become uneven due to distance differences from gas supply source causing plasma density non-uniformity and thin film quality deterioration
Solution Approach 1:
The gas supply system is segmented into multiple independent gas supply sources positioned at different locations (first gas supply source at front, second gas supply source at rear). Each gas supply source independently supplies process gas to substrates in its respective region, allowing localized control of gas flow and plasma generation to maintain uniformity across large substrate areas while processing multiple substrates simultaneously
Solution Approach 2:
Different regions of the reaction chamber are provided with tailored gas supply characteristics. The front region receives process gas from the first gas supply source while the rear region receives process gas from the second gas supply source, with each region's gas injection amount and plasma generation conditions optimized locally to account for distance differences from gas supply sources, thereby maintaining uniform plasma density and thin film quality across all substrate positions
2Area of stationary object
If substrates increase in size, then larger area substrates can be processed, but difference in gas injection amounts due to relative distance from gas supply source becomes more severe causing plasma generation unevenness
Solution Approach 1:
The reaction chamber is divided into front and rear regions with separate gas supply systems. This segmentation allows each region to independently control gas injection amounts and plasma generation conditions, compensating for the increased distance from gas supply sources that occurs with larger substrate areas and maintaining uniform plasma density across the entire substrate surface
Solution Approach 2:
The system adjusts gas injection parameters (flow rate, pressure, timing) independently for each gas supply source based on the specific requirements of its region. By changing these parameters adaptively, the system compensates for distance-related gas distribution non-uniformity and maintains stable plasma density even when processing large-area substrates
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables uniform atomic layer deposition on multiple large-area substrates, improving thin film quality and consistency across the substrate surface.
Implementation Method 1
a plasma generation unit installed between the gas supply means and a front end of the cassette and generating a plasma in a front space of the cassette
Implementation Method 2
generating a remote plasma between a showerhead and a cassette
Data Source
AI summary
Provided is a batch-type apparatus for atomic layer deposition for performing an atomic layer deposition process by generating a remote plasma between a showerhead and a cassette and bringing a process gas into a radical or ion state. The batch-type apparatus for atomic layer deposition includes a reaction chamber internally forming a predetermined reaction space isolated from an outside, gas supply means installed on one side of the reaction chamber and supplying the process gas in one direction inside the reaction chamber, gas discharge means installed on the other side facing the gas supply means in the reaction chamber and suctioning and discharging a gas supplied by the gas supply means and a gas inside the reaction chamber, a cassette disposed between the gas supply means and the gas discharge means inside the reaction chamber and mounting multiple substrates in parallel with each other in a separated state at a predetermined interval, and a plasma generation unit installed between the gas supply means and a front end of the cassette and generating a plasma in a front space of the cassette.