Remote Plasma ALE Biasing for Low-Damage Atomic Layer Etching
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Solution Overview
Problem
Existing atomic layer etching (ALE) technologies face challenges in achieving precise control over radical absorption and ion irradiation, leading to substrate damage due to high-energy ion impacts and narrow sputtering threshold voltage gaps, making it difficult to achieve atomic-level processing precision.
Innovation Solution
An apparatus utilizing a remote plasma source and DC pulse bias with a ceramic sheet, grooves, and a DC applying pin to control ion energy and temperature, enabling independent control of radical absorption and ion irradiation, and incorporating a lift ring for precise etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-energy ion impact is used for etching, then etching speed is improved, but substrate damage increases
Solution Approach 1:
The patent applies periodic action by using pulsed ion irradiation instead of continuous high-energy ion impact. The ion beam is delivered in controlled pulses that allow the etching process to proceed at high speed while providing rest periods that reduce cumulative substrate damage and enable precise control of etching depth at the atomic level.
2Productivity
If radical and ion interaction is used for etching, then etching process is achieved, but processing precision at atomic level cannot be obtained
Solution Approach 1:
The patent segments the etching process into distinct temporal phases: a radical absorption phase followed by a separate ion irradiation phase. This segmentation allows independent control of radical and ion interactions, enabling the system to first prepare the surface with radicals and then precisely remove atoms with ions, achieving atomic-level precision while maintaining etching efficiency.
3Speed
If plasma with high energy is used for removing surface layer, then absorption velocity is improved, but surface layer damage increases
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting plasma energy parameters and ion beam parameters throughout the etching process. The system modifies plasma power, gas flow rates, and ion beam energy to optimize absorption velocity at each stage while preventing excessive surface layer damage, enabling precise control of the etching process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus allows for precise control of ion energy and temperature, reducing substrate damage and enabling atomic-level etching with improved process precision and reduced processing time.
Implementation Method 1
a shower head for guiding a plasma generated from a remote plasma source into a chamber
Implementation Method 2
a DC applying pin whose end part protrudes to at least one among the plurality of grooves
Implementation Method 3
The radical absorption on the surface of the substrate and the ion irradiation may be controlled independently using the ALE process
Data Source
AI summary
An apparatus for etching an atomic layer comprises a shower head 11 for guiding a plasma generated from a remote plasma source RPS into a chamber C; a ceramic sheet 12 placed on an upper surface of a supporting block BD on which a wafer W is fixed, and having a plurality grooves G_1 to G_N; a temperature regulating block 16 placed under the ceramic sheet 12; and a DC applying pin 15 whose end part protrudes to at least one among the plurality of grooves G_1 to G_N.