Remote Plasma ALE Cycle for Faster Precise Substrate Etching
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Solution Overview
Problem
The atomic layer etching (ALE) process for semiconductor devices is time-consuming, leading to increased productivity costs due to the need for precise thickness control in high-integration semiconductor manufacturing, which prolongs the overall manufacturing process.
Innovation Solution
A substrate processing method using a substrate processing apparatus with a remote plasma generator, continuously supplying surface processing gas and purge gas, activating the gas with plasma power, and intermittently supplying etching gas to reduce the ALE process time by configuring the plasma power and etching gas supply as a unit cycle, repeated multiple times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ALE process is used for precise thickness control, then manufacturing precision is improved, but process time is increased
Solution Approach 1:
The patent implements continuous gas supply throughout the entire process cycle including during plasma treatment and etching phases, eliminating traditional purge steps. The gas flow continues without interruption, maintaining reactive species on the substrate surface continuously, which accelerates the etching process while preserving the precise thickness control characteristic of ALE
Solution Approach 2:
The patent pre-activates the surface processing gas using plasma treatment before the actual etching step. This preliminary activation creates a reactive surface layer that facilitates faster and more controlled etching in the subsequent step, thereby reducing total process time while maintaining precision
2Manufacturing precision
If ALE process is used for precise thickness control, then manufacturing precision is improved, but productivity is reduced
Solution Approach 1:
By eliminating purge steps and maintaining continuous gas supply during all process phases, the patent reduces the total number of process steps and minimizes idle time between operations. This continuous operation mode significantly increases throughput and productivity while preserving the atomic-layer precision of the ALE process
Solution Approach 2:
The patent employs periodic plasma treatment cycles that alternately activate and reactivate the surface processing gas during the process. This periodic reactivation ensures continuous etching capability across multiple cycles, enabling faster processing of thicker films while maintaining precise thickness control through each atomic layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces the ALE process time, enhancing productivity by allowing for faster semiconductor device manufacturing while maintaining precise thickness control.
Implementation Method 1
supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate
Implementation Method 2
the surface processing gas activated by the plasma power may modify a surface functional group of the substrate by using the halogen element
Implementation Method 3
The organic reaction gas may include one selected from the group consisting of trimethylamine (TMA), dimethylaluminum chloride, silicon tetrachloride (SiCl4), and Sn(acac)2 gases, or a combination thereof
Data Source
AI summary
A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.