Remote Plasma Substrate Treatment for Clean Uniform Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device fabrication, there is a need for precise etching processes that require stable plasma generation and substrate temperature control to ensure uniformity and prevent particle contamination by process by-products.
Innovation Solution
A substrate treating method and apparatus that involves temperature stabilization of the substrate, pressure stabilization of the plasma and treating spaces, and a treating step using plasma generated in a separate plasma space, with gas supply and exhaust control to maintain process pressures and prevent contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a plasma and etchant are supplied to etch a film on a substrate, then the film removal efficiency is improved, but particle contamination from process by-products increases
Solution Approach 1:
The chamber is divided into a plasma generation space and a treating space, allowing plasma generation to be separated from the substrate treatment area. This segmentation enables the etching process to occur in the plasma space while the substrate is treated in a cleaner environment, reducing particle contamination from plasma by-products.
Solution Approach 2:
A gas barrier layer is introduced as an intermediary between the plasma space and treating space. This gas barrier prevents process by-products and particles generated in the plasma space from directly contaminating the substrate in the treating space, while still allowing the etching process to proceed effectively.
2Manufacturing precision
If the substrate temperature is stabilized to a process temperature, then the uniformity of substrate treating is improved, but the complexity of temperature control increases
Solution Approach 1:
The chuck serves multiple functions: it holds the substrate in place and simultaneously heats it to the required process temperature. This multi-functionality simplifies the overall system by combining substrate positioning and temperature control in a single component, reducing device complexity while maintaining uniform substrate treatment.
3Reliability
If the pressure of the treating space is stabilized to a process pressure, then the plasma generation stability is improved, but the complexity of pressure control increases
Solution Approach 1:
A pressure sensor continuously monitors the pressure in the treating space and provides feedback to the controller. The controller adjusts the pressure control valve accordingly to maintain stable process pressure. This feedback mechanism ensures reliable plasma generation while automating the pressure control process, reducing operational complexity.
4Object-affected harmful factors
If an ion blocker is used to collect ions, then the particle contamination from process by-products is reduced, but the device complexity increases
Solution Approach 1:
The ion blocker acts as an intermediary component positioned between the plasma generation space and the treating space. It selectively blocks ions (which carry process by-products that cause contamination) while allowing neutral species to pass through to the substrate. This targeted blocking reduces particle contamination with a relatively simple structural addition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method and apparatus effectively treat substrates by stabilizing temperatures and pressures, allowing for precise etching of films without particle contamination, thereby improving the reliability and precision of semiconductor device fabrication processes.
Implementation Method 1
a plasma space for generating a plasma... a treating step for generating the plasma at the plasma space and treating the substrate using the plasma
Implementation Method 2
an ion of the plasma generated at the plasma space is collected by an ion blocker positioned between the plasma space and the treating space
Implementation Method 3
heating the substrate at the treating space by a chuck supporting the substrate
Data Source
AI summary
A substrate treating method includes a temperature stabilizing step for stabilizing a temperature of the substrate to a process temperature in a treating space for treating a substrate, a pressure stabilizing step for stabilizing a pressure of a plasma space for generating a plasma and a pressure of the treating space to a process, the plasma space fluid communicating with the treating space, and a treating step for generating the plasma at the plasma space and treating the substrate using the plasma.