Remote Plasma Etching Selectivity and Damage Control
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Solution Overview
Problem
Current etching methods using direct plasma technology face limitations in improving selectivity and often damage films that do not require etching, while also risking damage to the etching object.
Innovation Solution
An etching method employing remote plasma sources with the use of water and hydrogen gases, where plasma is generated and applied to a process chamber, enhancing selectivity and reducing damage by controlling the plasma components and their application pathways.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If direct plasma technology (CCP or ICP) is used to achieve high etch rate, then the etching speed is improved, but selectivity deteriorates and damage to non-target films increases
Solution Approach 1:
The patent introduces a remote plasma source as an intermediary device that generates plasma outside the process chamber and transports it via gas flow. This mediator approach allows plasma to be delivered with controlled reactivity, achieving high etch rates on target materials while reducing damage to non-target films and improving selectivity compared to direct plasma methods.
Solution Approach 2:
The patent changes the physical parameters of plasma delivery by using remote plasma generation and gas-phase transport. This transforms the plasma from a high-energy direct state to a controlled, transported state with adjustable reactivity parameters, enabling simultaneous achievement of high etch rates and improved selectivity.
2Productivity
If direct plasma is used to increase etch rate, then productivity is improved, but damage to the etching object and non-target films increases
Solution Approach 1:
The remote plasma source acts as an intermediary that decouples plasma generation from the etching location. Plasma is generated in a separate chamber and transported through gas flow, which moderates its reactivity and reduces harmful effects on the etching object and surrounding films while maintaining high etch rates.
Solution Approach 2:
The patent extracts the plasma generation function from the process chamber and places it in a remote plasma source. This separation removes the harmful high-energy plasma components from direct contact with the etching object, delivering only the necessary reactive species through controlled gas transport.
3Manufacturing precision
If conventional plasma etching is used, then the etching process can be performed, but selectivity improvement is restricted
Solution Approach 1:
The remote plasma source serves as an intermediary system that enables superior selectivity control. By generating plasma remotely and transporting it through gas flow, the system achieves precise control over plasma reactivity and distribution, significantly improving selectivity compared to conventional direct plasma methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly improves etch rate and selectivity of semiconductor materials, particularly silicon nitride films, while minimizing damage to non-target films, thereby enabling more precise and efficient semiconductor device fabrication.
Implementation Method 1
generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS
Implementation Method 2
the water is supplied during a pretreatment step performed on the etching object before an etching process or in the form of vapor during the etching process
Data Source
AI summary
An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.