Remote Plasma Unit Gas Line Segmentation
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Solution Overview
Problem
In substrate processing, batch processing of multiple wafers increases throughput but compromises precision, while single-wafer processing maintains precision but reduces throughput, and shared cleaning gas lines among reaction chambers lead to variations in film uniformity and composition due to cross-talk issues.
Innovation Solution
A substrate processing apparatus with a shared remote plasma unit and separate cleaning gas lines for each reaction chamber, equipped with valves to isolate cleaning gas from process gas, ensuring precise control and uniformity by preventing cross-talk during processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple reaction chambers share a common cleaning gas supply system, then throughput increases, but cross-talk through the cleaning line causes variations in film uniformity and composition
Solution Approach 1:
The patent divides the common cleaning gas supply system into separate cleaning gas lines for each reaction chamber. Each cleaning gas line is independently connected to its respective reaction chamber, preventing cross-talk between chambers while maintaining the ability to process multiple wafers simultaneously. This segmentation resolves the contradiction by allowing high throughput without compromising film uniformity.
2Productivity
If multiple reaction chambers share a common process gas supply system, then throughput increases, but cross-talk causes variations in film composition
Solution Approach 1:
The patent implements separate process gas lines for each reaction chamber, with each line independently connected to its chamber. This segmentation prevents cross-talk in the process gas supply system, ensuring that each chamber receives precisely controlled process gas without interference from other chambers, thereby maintaining film composition consistency while enabling simultaneous processing.
3Productivity
If batch processing is used to increase throughput, then productivity improves, but processing precision deteriorates
Solution Approach 1:
The patent segments the processing system into multiple independently controlled reaction chambers, each with its own gas supply lines and control systems. This allows each chamber to perform single-wafer processing with high precision while the overall system achieves batch processing throughput by operating multiple chambers simultaneously. The independence of each chamber eliminates cross-talk while maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-precision processing of multiple wafers with improved throughput by preventing cross-talk and maintaining uniform film deposition across reaction chambers, thus enhancing processing efficiency and consistency.
Implementation Method 1
a shared remote plasma unit
Data Source
AI summary
A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a shared remote plasma unit; a plurality of first cleaning gas lines configured to fluidly couple the shared remote plasma unit to the reaction chambers; and a cleaning gas source to provide the shared remote plasma unit with a cleaning gas; wherein each of the first cleaning gas lines is provided with a valve and is connected to a sidewall of the reaction chamber.