Remote Plasma Treatment for Low-k Dielectric Adhesion
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Solution Overview
Problem
Adhesion issues between low-k dielectric materials and underlying layers in copper damascene structures lead to film cracking and peeling, causing device package qualification failures in semiconductor devices.
Innovation Solution
A method involving the formation of a first etch stop layer, an adhesion layer, and a dielectric layer over a substrate, followed by a remote plasma treatment to reduce native oxide on copper conductors and improve adhesion between the dielectric and subsequent etch stop layers, enhancing the adhesion value by minimizing carbon loss and maintaining dielectric constant integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If copper interconnects are formed using damascene processes with low-k dielectric materials, then interconnect speed is improved by reducing RC time delay, but adhesion issues occur between the low-k dielectric material and the underlying layer causing film cracking and peeling
Solution Approach 1:
A remote plasma treatment step is performed on the low-k dielectric layer before depositing the etch stop layer. This preliminary action modifies the dielectric layer surface to improve adhesion properties, preventing film cracking and peeling while maintaining the low-k material's electrical performance
Solution Approach 2:
The remote plasma treatment changes the surface parameters of the low-k dielectric layer by controlling carbon content and creating a more adhesive surface morphology. This parameter modification enables better bonding between the dielectric layer and etch stop layer without affecting the bulk low-k properties
2Reliability
If remote plasma treatment is performed on the low-k dielectric layer, then adhesion between the dielectric layer and etch stop layer is improved, but carbon loss in the dielectric layer may occur
Solution Approach 1:
The remote plasma treatment parameters are precisely controlled to achieve the desired surface modification while minimizing carbon loss. By adjusting plasma power, gas flow rates, and treatment duration, the process optimizes the balance between adhesion improvement and carbon content preservation
Solution Approach 2:
The patent replaces direct plasma treatment (which causes significant carbon loss) with remote plasma treatment. This substitution uses a filtered plasma that provides surface activation without the harsh direct plasma bombardment, reducing carbon loss while maintaining adhesion benefits
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves adhesion between the inter-metal dielectric layer and the etch stop layer, reducing peeling and enhancing device performance and package capabilities.
Implementation Method 1
performing a remote plasma treatment on the low-k dielectric layer and the conductive layer
Data Source
AI summary
A method of forming a semiconductor device comprises forming a first etch stop layer over a substrate. The method also comprises forming a low-k dielectric layer comprising carbon over the first etch stop layer. The method further comprises forming an opening in the low-k dielectric layer. The method additionally comprises filling the opening with a conductive layer. The method also comprises performing a remote plasma treatment on the low-k dielectric layer and the conductive layer. The method further comprises forming a second etch stop layer over the treated conductive layer and the treated low-k dielectric layer.