Remote Plasma Chamber Etch for Molybdenum Film Buildup
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Solution Overview
Problem
Traditional methods for maintaining reaction chambers used in semiconductor fabrication require significant downtime for periodic replacement of parts, leading to production losses due to accumulated molybdenum or molybdenum nitride films on interior walls, which cause performance irregularities and particle issues.
Innovation Solution
An apparatus and method utilizing a remote plasma unit with halide precursors to form radical gases that react with and remove molybdenum or molybdenum nitride films from the reaction chamber walls, allowing for in-situ etching without the need for extensive downtime, using a halide precursor, inert gas, and purge gas to activate and clean the films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional preventative reaction chamber maintenance is used to remove accumulated films, then the reaction chamber can be cleaned, but significant downtime (1 week or more) is required for part replacement
Solution Approach 1:
The patent replaces mechanical cleaning methods (physical disassembly and manual cleaning) with a chemical plasma-based cleaning system. The remote plasma unit generates reactive species that chemically react with and remove molybdenum films from chamber walls, eliminating the need for mechanical part replacement and extensive downtime.
Solution Approach 2:
The patent changes the physical and chemical parameters of the cleaning process by introducing a plasma environment with specific gas compositions (halide precursors, inert gases, purge gases) and controlling pressure, temperature, and power parameters. This enables effective film removal under controlled conditions without mechanical intervention.
2Productivity
If molybdenum or molybdenum nitride films accumulate on reaction chamber walls, then deposition process continues, but temperature irregularities and particle issues occur
Solution Approach 1:
The patent implements a preliminary cleaning action by integrating the plasma cleaning system into the deposition process workflow. The remote plasma unit is activated to remove accumulated films before they reach critical levels that would cause temperature irregularities or particle contamination, preventing performance degradation proactively.
Solution Approach 2:
The patent enables continuous operation by performing cleaning in-situ within the reaction chamber without requiring shutdown or disassembly. The plasma cleaning can be performed periodically or continuously during deposition operations, maintaining chamber cleanliness and process stability without interrupting productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and timely cleaning of reaction chambers, reducing downtime and production losses by effectively removing molybdenum or molybdenum nitride films, thereby maintaining process stability and substrate quality.
Implementation Method 1
igniting a remote plasma unit by flowing an inert gas into the remote plasma unit; flowing a halide precursor into the remote plasma unit to form a radical gas
Implementation Method 2
the radical gas reacts with the molybdenum film; the radical gas reacts with the deposited film to remove the deposited film from the reaction chamber
Data Source
AI summary
An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.