Remote Plasma Oxide Layer for Low-k Gate Spacer Protection
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Solution Overview
Problem
As semiconductor devices undergo miniaturization, the reduction in minimum feature size leads to challenges such as leakage problems due to oxidation of low-k gate spacers during the formation of oxide layers, which can compromise the integrity and thickness of these spacers.
Innovation Solution
A remote plasma deposition method is used to form a main sidewall oxide over low-k gate spacers, reducing damage and oxidation, thereby maintaining the spacer thickness and preventing leakage issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma or chemical vapor deposition is used to form oxide layers, then oxide layer formation is achieved, but low-k gate spacers undergo oxidation and damage leading to thickness reduction and leakage
Solution Approach 1:
A sacrificial oxide layer is deposited as an intermediary protective barrier between the oxide formation process and the low-k gate spacer. This sacrificial layer absorbs the oxidative damage and is subsequently removed, leaving the low-k gate spacer intact and undamaged throughout the oxide formation process
Solution Approach 2:
The sacrificial oxide layer is deposited in advance before the actual oxide formation process. This preliminary protective layer is specifically designed to withstand the oxidative conditions during oxide deposition, thereby protecting the underlying low-k gate spacer from oxidation damage before it can occur
2Productivity
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but leakage problems arise due to oxidation of gate spacers
Solution Approach 1:
The sacrificial oxide layer serves as a protective intermediary that enables continued miniaturization and high integration density while preventing the oxidation-induced leakage that would otherwise occur in scaled-down devices with low-k gate spacers
3Object-affected harmful factors
If remote plasma deposition is used to form oxide layer, then low-k gate spacers are protected from oxidation, but process complexity increases
Solution Approach 1:
The sacrificial oxide layer provides effective oxidation protection through a well-established deposition process, avoiding the need for complex remote plasma deposition equipment while achieving the same protective effect with conventional CVD technology
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The remote plasma deposition technique effectively protects the low-k gate spacers from oxidation, ensuring their thickness is maintained, thus reducing the risk of leakage and enhancing the reliability of semiconductor devices.
Implementation Method 1
A remote plasma deposition method is used to form a main sidewall oxide over low-k gate spacers
Implementation Method 2
A remote plasma deposition method is used to form a main sidewall oxide over low-k gate spacers, reducing damage and oxidation
Data Source
AI summary
A remotely generated plasma energizes radicals of a process gas. The radicals of the process gas may interact with a precursor gas to cause a reaction to form an oxide on a region of a workpiece. The formation of the oxide is formed without damaging an underlying layer, such as a low-k dielectric layer. The oxide layer may correspond to a main sidewall oxide over a gate spacer in the formation of a FinFET device.