Remote Plasma SiOC Deposition Preserving Bond Integrity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current PECVD processes for depositing oxygen doped silicon carbide (SiOC) thin films face challenges such as poor step coverage, high dielectric constants, low breakdown voltages, and the inability to deposit films over exposed copper surfaces without oxidizing them, due to direct plasma conditions that break silicon-oxygen and silicon-carbon bonds, leading to undesirable chemical structures and electrical properties.
Innovation Solution
A method involving silicon-containing precursors with silicon-hydrogen and silicon-silicon bonds, which are made reactive by breaking silicon-hydrogen or silicon-silicon bonds while preserving silicon-oxygen and silicon-carbon bonds, using radical species in a low energy state from a remote plasma source to form oxygen doped silicon carbide, avoiding direct plasma exposure that breaks these bonds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If direct plasma conditions are used to activate precursors, then precursor reactivity is improved, but silicon-oxygen and silicon-carbon bonds are broken leading to poor film quality
Solution Approach 1:
The plasma activation process is separated into two distinct stages: (1) plasma exposure in a first chamber to generate reactive species, and (2) film deposition in a second chamber free from direct plasma. This segmentation prevents bond breaking during deposition while maintaining precursor reactivity from the plasma exposure stage.
Solution Approach 2:
A remote plasma source or carrier gas acts as an intermediary to transfer reactive species from the plasma chamber to the deposition chamber without exposing the film-forming region to direct plasma. This intermediary approach maintains precursor activation while avoiding harmful bond breaking.
2Productivity
If conventional PECVD processes are used, then deposition speed is improved, but step coverage and dielectric properties deteriorate
Solution Approach 1:
The process is divided into separate plasma exposure and deposition steps, allowing optimization of each stage independently. The plasma exposure provides sufficient activation for good step coverage, while the plasma-free deposition maintains dielectric properties.
Solution Approach 2:
Process parameters are optimized across two stages: plasma exposure conditions are tuned for precursor activation and step coverage, while deposition conditions are optimized for film quality and dielectric properties, achieving both high productivity and precision.
3Ease of manufacture
If direct plasma is applied to copper surfaces, then film deposition is improved, but copper oxidation occurs
Solution Approach 1:
The deposition process is separated from direct plasma exposure, allowing film formation on copper surfaces without plasma-induced oxidation. The plasma-free deposition environment protects copper while enabling film deposition.
Solution Approach 2:
The deposition chamber maintains an inert or reducing atmosphere without direct plasma exposure, preventing copper oxidation while allowing film deposition. This creates a protective environment for copper surfaces during the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-quality SiOC films with excellent step coverage, low dielectric constants, high breakdown voltages, and the ability to deposit films over copper surfaces without oxidation, improving electrical properties and porosity, while maintaining the integrity of silicon-oxygen and silicon-carbon bonds.
Implementation Method 1
The one or more radical species can be formed in a remote plasma source
Implementation Method 2
introducing from a source gas one or more radical species in a substantially low energy state to react with the silicon-containing precursor to form oxygen doped silicon carbide
Data Source
AI summary
Provided are methods and systems for providing oxygen doped silicon carbide. A layer of oxygen doped silicon carbide can be provided under process conditions that employ silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the oxygen doped silicon carbide. The one or more radical species can be formed in a remote plasma source.