Remote Plasma Substrate Processing with Ion Filtering
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Solution Overview
Problem
Existing substrate processing methods using a single plasma process recipe often result in undesired patterns and damage to semiconductor substrates due to the application of ions in the plasma, as the recipe cannot accurately control the generation of multiple desired plasmas for precise etching.
Innovation Solution
Generating multiple plasmas from different reaction gases under distinct process recipes and using showerheads with specific extracting holes to isolate and apply only the etching radicals to the substrate, while excluding damaging ions and electrons, and applying bias to generate ions for anisotropic etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single process recipe is used to generate plasma, then the process is simple, but the etching precision and pattern accuracy deteriorate
Solution Approach 1:
The single plasma source is segmented into multiple plasma sources (first plasma source and second plasma source), each generating plasma under different process recipes. This allows independent optimization of etching conditions for different regions or layers of the substrate, thereby improving etching precision while maintaining manageable process complexity through modular architecture.
Solution Approach 2:
Different process recipes are applied locally through separate plasma sources, allowing each plasma to be optimized for specific etching requirements. The first plasma and second plasma can have different compositions, powers, and flow rates tailored to specific etching needs, achieving high precision etching without requiring complex global process control.
2Ease of operation
If a single process recipe is used to generate plasma, then the equipment operation is simple, but the pattern shape accuracy deteriorates
Solution Approach 1:
The plasma generation system is segmented into independent plasma sources, each capable of operating under its own optimized process recipe. This segmentation allows each source to be independently controlled and optimized for specific pattern formation requirements, improving pattern shape accuracy while maintaining ease of operation through standardized plasma source modules.
Solution Approach 2:
Different process parameters (power, flow rate, pressure, gas composition) are changed and optimized for each plasma source according to specific etching requirements. This parameter optimization enables precise control over etching kinetics, allowing accurate pattern shape formation without complicating the overall equipment operation.
3Device complexity
If plasma is generated using a single process recipe, then the process is straightforward, but substrate damage increases due to ion application
Solution Approach 1:
The harmful ions are extracted and separated from the beneficial reactive species in the plasma. By using filtering structures or selective transport mechanisms, only the desired neutral radicals and molecules are allowed to reach the substrate, while ions are removed or redirected. This extraction principle maintains process straightforwardness while eliminating substrate damage caused by ion bombardment.
Solution Approach 2:
The ions that would normally cause substrate damage are converted into a beneficial component by using them for anisotropic etching in a controlled manner. By applying bias to specific plasma sources or using ion-filtered plasma in combination with radical-rich plasma, the ions are utilized to provide directional etching precision while their harmful random bombardment effects are minimized or controlled.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of the etching process, minimizing substrate damage and achieving desired shapes by optimizing the application of individual plasma ingredients, ensuring only the necessary components for processing are applied.
Implementation Method 1
a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas
Implementation Method 2
the plasma may be generated by using a single process recipe
Implementation Method 3
extracting a first ingredient used for processing the substrate from ingredients in the first plasma, and extracting a second ingredient used for the processing the substrate from ingredients in the second plasma. The individually applying may include applying the first ingredient and the second ingredient to the substrate
Implementation Method 4
the generating ions may include applying bias to the extracted first ingredient and the extracted second ingredient
Implementation Method 5
The first ingredient may include a first radical for etching the substrate. The second ingredient may include a second radical for etching the substrate
Data Source
AI summary
In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.