Remote Plasma UV Deposition for Dense Low-Temperature Layers
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Solution Overview
Problem
Conventional semiconductor deposition processes are expensive due to slow layer growth rates and often result in layers with less than desired density, and high temperatures can damage previously formed features on the semiconductor workpiece.
Innovation Solution
The use of plasma, electric field, and photo heating during deposition, combined with a radiation transparent window and a robotic mechanism for window replacement without breaking the vacuum, allows for high density layer formation at low temperatures, achieving faster growth rates and preserving existing features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional deposition processes are used, then manufacturing cost is reduced, but layer growth rate is slow and layer density is insufficient
Solution Approach 1:
The patent applies plasma enhancement to change the physical and chemical parameters of the deposition process. Plasma provides ionized species and reactive radicals that significantly enhance the deposition rate while maintaining or improving layer density. The plasma state enables faster reaction kinetics and better material incorporation, resolving the contradiction between growth rate and layer quality.
Solution Approach 2:
The patent uses plasma as a strong oxidizing environment to accelerate the deposition process. Plasma contains highly reactive oxygen species and ions that rapidly oxidize precursor materials, enabling faster layer formation with improved density and stoichiometry. This accelerated oxidation mechanism directly addresses the slow growth rate issue while ensuring high layer quality.
2Manufacturing precision
If high temperatures are used to increase layer density, then layer quality improves, but previously formed features on the semiconductor workpiece are damaged
Solution Approach 1:
The patent changes the temperature parameter by using plasma-enhanced deposition at low temperatures. Plasma provides the necessary activation energy through ion bombardment and reactive species, eliminating the need for high thermal energy. This allows achieving high layer density without exposing the semiconductor workpiece to damaging high temperatures, thus protecting previously formed features.
Solution Approach 2:
The patent substitutes thermal energy with plasma energy. Instead of using high temperature (thermal mechanism) to achieve dense layers, the process uses plasma chemistry and ion bombardment (non-thermal mechanism) to provide the necessary activation energy. This substitution enables low-temperature deposition with high layer quality, avoiding damage to temperature-sensitive features.
3Temperature
If radiation transparent window is used for photo heating, then temperature control during deposition improves, but vacuum integrity is compromised
Solution Approach 1:
The patent introduces a radiation transparent window as an intermediary component that allows UV radiation to pass through while maintaining vacuum separation. The window acts as a barrier that transmits heating radiation but prevents gas exchange, enabling independent control of the atmosphere in each chamber. This intermediary solution achieves both temperature control and vacuum integrity simultaneously.
Solution Approach 2:
The patent divides the deposition system into two separate vacuum chambers separated by a radiation transparent window. This segmentation allows independent optimization of each chamber's atmosphere and temperature conditions. The first chamber can be maintained at high vacuum for plasma generation, while the second chamber receives UV radiation for photo-heating, with the window maintaining vacuum integrity between them.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables quicker layer growth with increased density and temperature control, avoiding damage to pre-existing semiconductor features while maintaining vacuum integrity.
Implementation Method 1
applying radiation to the semiconductor workpiece, whereby a surface of the semiconductor workpiece is heated
Implementation Method 2
ionizing the second precursor, and igniting the second precursor to generate a plasma
Data Source
AI summary
A method Includes: placing a semiconductor workpiece on a wafer chuck in a processing chamber; heating, by a heating element, the processing chamber; introducing a first precursor into the processing chamber; introducing a second precursor into the processing chamber; applying radiation, through a window, to a top surface of the semiconductor workpiece to heat the semiconductor workpiece; while the second precursor is in the processing chamber, applying a voltage bias to the wafer chuck, and wherein the voltage bias causes at least a portion of the second precursor to accelerate away from the window; reducing a pressure within the processing chamber; and replacing the window while the pressure in the processing chamber is reduced.