Electrically Reprogrammable Fuse Void Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing electrically programmable semiconductor fuses have a permanent and uncontrollable resistance shift due to high power density programming, which is not easily reversible.
Innovation Solution
An electrically reprogrammable fuse is designed with an interconnect in a dielectric material, featuring sensing and programming wires that allow for the formation and reversal of a surface void through directional electron currents, enabling controlled and reversible resistance changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high electron current is used to program the fuse, then the fuse can be programmed, but the resistance shift becomes uncontrollable and permanent
Solution Approach 1:
The patent changes the physical parameters of the fuse structure by introducing a void formation mechanism. Instead of directly controlling resistance through current magnitude, the invention uses electron current to create voids in the conductive layer, which indirectly controls resistance in a more predictable and controllable manner.
Solution Approach 2:
The void acts as an intermediary mechanism between the electron current and the resistance change. Rather than the current directly causing uncontrollable resistance shift, it first creates a void structure that then determines the resistance characteristics, providing better control over the final resistance state.
2Productivity
If high power density is applied for programming, then programming can be achieved, but the process cannot be reversed
Solution Approach 1:
The patent introduces dynamic reversibility to the fuse structure. By designing the fuse with a void formation mechanism that can be created and then filled, the system transitions from a static one-time programming state to a dynamic state that can be changed multiple times, enabling reprogrammability while maintaining programming speed.
Solution Approach 2:
The invention uses a recoverable void structure. The electron current creates a void (discarding material), and subsequent current in the opposite direction can fill the void (recovering material), allowing the fuse to be reprogrammed multiple times without permanent damage, thus enabling adaptability.
3Manufacturing precision
If a void is formed in the interconnect, then resistance control is improved, but the structure becomes more complex
Solution Approach 1:
The patent segments the conductive interconnect by creating a localized void within it. This segmentation divides the continuous conductive path into sections separated by the void, allowing independent control of resistance through the void's presence and position, thereby improving resistance control without requiring complete structural redesign.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for precise and reversible programming of semiconductor fuses, reducing power consumption and enabling dynamic re-routing of circuits with improved resistance control.
Implementation Method 1
programming the electrically reprogrammable fuse by inducing an electron current from a first programming wire through an interconnect to a second programming wire operative to effect electromigration in the interconnect, such that a void is formed between the interconnect and a sensing wire
Implementation Method 2
reprogramming the electrically reprogrammable fuse by inducing an electron current from the second programming wire through the interconnect to the first programming wire operative to effect electromigration in the interconnect, such that the interconnect contacts the sensing wire
Data Source
AI summary
An electrically reprogrammable fuse comprising an interconnect disposed in a dielectric material, a sensing wire disposed at a first end of the interconnect, a first programming wire disposed at a second end of the interconnect, and a second programming wire disposed at a second end of the interconnect, wherein the fuse is operative to form a surface void at the interface between the interconnect and the sensing wire when a first directional electron current is applied from the first programming wire through the interconnect to the second programming wire, and wherein, the fuse is further operative to heal the surface void between the interconnect and the sensing wire when a second directional electron current is applied from the second programming wire through the interconnect to the first programming wire.