ReRAM Forming Voltage Control via Plasma-Induced Defects
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Solution Overview
Problem
It is challenging to adjust the forming voltage of ReRAM devices without altering the dielectric film thickness, as reducing the thickness can cause performance issues or require switching to different materials.
Innovation Solution
The method involves post-deposition plasma processing of the dielectric film using H2 gas to introduce additional defects, lowering the forming voltage without significantly changing the film thickness, utilizing a microwave plasma source for controlled defect introduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the dielectric film thickness is reduced to lower the forming voltage, then the forming voltage decreases, but device performance deteriorates and material switching is required
Solution Approach 1:
The patent changes the defect concentration parameter in the dielectric film through plasma treatment rather than changing the film thickness. By introducing additional defects via hydrogen plasma exposure, the forming voltage is reduced while maintaining the original film thickness and material composition, thus avoiding performance deterioration
Solution Approach 2:
The patent performs preliminary plasma treatment on the dielectric film before the forming process. This preliminary action introduces defects that facilitate subsequent filament formation, effectively lowering the forming voltage requirement without compromising device reliability
2Use of energy by moving object
If the dielectric film thickness is reduced to lower the forming voltage, then the forming voltage decreases, but different dielectric materials must be used
Solution Approach 1:
The patent changes the physical state of the dielectric film by introducing defects through plasma treatment, rather than changing the material itself. This allows the same dielectric material to achieve lower forming voltage, maintaining material compatibility and process versatility
3Use of energy by moving object
If plasma treatment is applied to create additional defects, then the forming voltage is lowered, but the dielectric film thickness remains unchanged
Solution Approach 1:
The patent selectively changes the defect concentration parameter through plasma treatment while deliberately maintaining the thickness parameter unchanged. This selective parameter modification achieves lower forming voltage without compromising manufacturing precision for thickness control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of the forming voltage in ReRAM devices, maintaining the dielectric film thickness and performance, by creating additional defects in the dielectric film, thereby reducing the voltage required for filament formation.
Implementation Method 1
forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas
Implementation Method 2
the exposing includes exciting the treatment gas using a microwave plasma source
Data Source
AI summary
A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.