ReRAM Page Programming Sequences for Thermal Disturbance
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Solution Overview
Problem
High-density Resistive RAM (ReRAM) arrays experience performance degradation and increased program operation time due to thermal disturbances caused by current application during page programming, affecting neighboring memory cells.
Innovation Solution
Implementing page programming sequences that skip adjacent pages and modify the column select circuit to program every other page sequentially, avoiding thermal disturbances by controlling the pulse application after cells have cooled, and rearranging page formations using non-adjacent cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If current is applied to perform program operations on memory cells, then programming function is achieved, but thermal disturbance is caused to neighboring memory cells increasing temperature
Solution Approach 1:
The memory array is divided into multiple independent banks, and within each bank, pages are segmented into groups that are programmed separately. This segmentation allows thermal disturbances to be isolated to specific groups rather than affecting the entire array, enabling better thermal management and reduced cross-interference between neighboring memory cells.
Solution Approach 2:
The patent implements periodic programming sequences where groups of pages are programmed in alternating patterns (e.g., programming even pages then odd pages, or programming in alternating banks). This periodic action allows thermal disturbances to dissipate between programming operations on adjacent pages, reducing cumulative temperature increases and improving data retention reliability.
2Reliability
If waiting period is introduced before operations on neighboring pages, then thermal disturbance is reduced, but program operation time increases
Solution Approach 1:
Instead of introducing idle waiting periods between page programming operations, the patent maintains continuous useful action by overlapping programming operations across different banks and page groups. While one bank or group is cooling down, another bank or group continues programming operations, eliminating idle time and reducing total program operation time while still allowing thermal management through spatial distribution.
Solution Approach 2:
The patent transitions from sequential one-dimensional page programming to parallel multi-dimensional programming across multiple banks and page groups. By utilizing the bank dimension and page group dimension simultaneously, the system can perform multiple programming operations in parallel, reducing the overall time required while maintaining thermal management through spatial separation of hot and cold regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces program operation time by minimizing thermal interference, enhancing performance and reliability in high-density ReRAM arrays by optimizing page programming sequences and assignments.
Implementation Method 1
the current applied to perform the operation may cause a thermal disturbance to memory cells in neighboring pages, increasing the temperature of the memory cells in the neighboring pages
Data Source
AI summary
Embodiments of the invention are directed towards a memory device comprising a plurality of wordlines each coupled to a row of memory cells in a subtile of the memory device, a plurality of level one column select circuits coupled to each cell in a plurality of groups of cells in a subtile, a plurality of level two column select circuits coupled to each of the plurality of groups of cells in the subtile, a common bit line coupled to the plurality of level one column select circuits and the plurality of level two column select circuits, the common bit line also coupled to a sense and program circuit, wherein the sense and program circuit addresses each first cell in each of the groups of cells to form a single page of memory.