ReRAM PUF Key Generation via Low-Current Ephemeral Path Formation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional encryption and authentication systems rely on key-based schemes that are vulnerable to compromise and side-channel attacks, and challenge-response methods are susceptible to interception, compromising security in communication channels.

Innovation Solution

The use of unformed ReRAM cells to generate physical unclonable functions (PUFs) for cryptographic key generation, where low current injection induces ephemeral conductive path formation and measurement, providing unique and secure cryptographic keys without altering the cells' state, and categorizing cells into rugged and vulnerable populations to detect unauthorized characterization.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional key-based encryption schemes are used, then encryption and authentication can be performed, but the system becomes vulnerable to compromise and side-channel attacks

Engineering Contradiction:
ImprovesecurityVSAvoidvulnerability to attacks
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The ReRAM cells generate their own unique resistance characteristics that serve as cryptographic keys, eliminating the need for external key distribution and management infrastructure. Each cell's inherent physical properties provide the security foundation, making the system self-sufficient and resistant to traditional attacks.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent utilizes the natural resistance value parameter of ReRAM cells, which varies uniquely for each cell due to manufacturing variations. By measuring and utilizing these resistance parameters directly as cryptographic keys, the system transforms a manufacturing imperfection into a security feature, making each device's keys unique and unclonable.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If pre-formed ReRAM cells are used for memory storage, then digital memory bits can be stored, but the cells undergo irreversible forming process that lowers resistance permanently

Engineering Contradiction:
Improvememory storage capabilityVSAvoidcell resistance state
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent performs the forming action preliminarily during manufacturing, creating ReRAM cells with controlled resistance characteristics. These pre-formed cells are then used in their formed state for PUF operations, eliminating the need for repeated forming cycles and maintaining stable resistance values for cryptographic key generation.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Instead of using unformed cells with extremely high resistance, the patent inverts the conventional approach by utilizing pre-formed cells with lower, stable resistance values. This inversion allows the cells to maintain their composition stability while still providing unique resistance characteristics for PUF functionality.

Inventive Principle:
Principle #13The other way round (Inversion)

3Measurement precision

If high current is injected through ReRAM cells to measure resistance, then accurate measurements can be obtained, but conductive path formation occurs that permanently alters cell state

Engineering Contradiction:
Improveresistance measurement accuracyVSAvoidconductive path integrity
Core Design Contradiction:
Measurement precisionVSStability of the object's composition

Solution Approach 1:

The patent changes the current parameter to a low level that is sufficient for measurement purposes but below the threshold that would trigger conductive path formation. This parameter optimization allows accurate resistance measurements to be taken without altering the cell's conductive path structure or permanent state.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies partial action by using only the minimum necessary current level required for resistance measurement. This partial current injection is sufficient to obtain measurement data while avoiding the excessive current that would cause conductive path formation and permanent cell state changes.

Inventive Principle:
Principle #16Partial or excessive action

4Reliability

If cryptographic keys are exchanged over communication channels, then secure communication can be established, but the keys become susceptible to interception

Engineering Contradiction:
Improvesecure communicationVSAvoidkey interception
Core Design Contradiction:
ReliabilityVSLoss of information

Solution Approach 1:

The patent extracts the cryptographic key generation process from the communication protocol and embeds it directly within the ReRAM device. Instead of exchanging keys over communication channels, each device independently generates its own keys from its unique physical characteristics, eliminating the vulnerable key exchange step entirely.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The ReRAM cell's unique resistance characteristics serve as an intermediary that enables secure communication without direct key exchange. The physical properties of the ReRAM cell mediate the generation of cryptographic keys, allowing two parties to establish secure communication through their respective device characteristics rather than through vulnerable communication channels.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances security by generating a large number of unique cryptographic keys with low power consumption, resisting side-channel attacks and allowing secure communication without exchanging keys over insecure channels, while maintaining the cells' quasi-pristine state for repeated use.

Implementation Method 1

Nucleation is when clumps of ions begin to group together at one of the contact points

Methodology Applied
Scientific EffectIons begin to group together at contact points forming conductive paths: Nucleation

Implementation Method 2

cations (e.g., Cu or other active metal ions) migrate from the first (active) electrode into the dielectric material to form one or more essentially permanent, but breakable or dissolvable, conductive paths

Methodology Applied
Scientific EffectCations migrate from the active electrode into the dielectric material to form conductive paths: Ion Exchange

Implementation Method 3

After measurement, the resistance values return to the original high resistance values of the pristine states (typically 100 MΩ or higher). Thus, the resistance of the cells measurable with small current injection is ephemeral and reversible.

Methodology Applied
Scientific EffectThe resistance values return to the original high resistance values of the pristine states:

Data Source

PatentUS11610629B2Sensing scheme for low power reram-based physical unclonable functions
Publication Date: 2023.03.21 ARIZONA BOARD OF REGENTS ACTING FOR & ON BEHALF OF NORTHERN ARIZONA UNIV
  • US11610629B2 patent drawing
  • US11610629B2 patent drawing
  • US11610629B2 patent drawing

AI summary

A system and method of secure communication between computing devices based on physical unclonable functions such as memories having dissolvable conductive paths is provided. The method involves enrolling a client device, the client device having a PUF such as a pristine ReRAM. The PUF is enrolled in a secure environment by reading and storing the resistances of the PUF's addressable memory cells. The cells are categorized into “rugged” and “vulnerable” categories on the basis of their resistance, the vulnerable cells being those more likely to be permanently altered during the generations of PUF responses. The rugged cells are used for the generation of PUF responses for cryptographic key generation, but the vulnerable cells may be inspected to detect unauthorized 3rd party access to the PUF.