ReRAM Stop Layer Hydrogen Control for Data Retention
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Solution Overview
Problem
Resistive random-access memory (ReRAM) devices experience data retention loss and structural reliability issues during high-temperature processes like soldering reflow due to high hydrogen content in the stop layer.
Innovation Solution
A ReRAM device with a hydrogen-controlled stop layer having a lower hydrogen content, formed by reducing the hydrogen ratio to less than 7% and thickness to less than 400 angstroms, which improves the device's data retention and structural reliability during high-temperature processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional stop layer is used in the ReRAM device, then the device can be manufactured with standard processes, but the device experiences data retention loss and structural reliability issues during high-temperature processes like soldering reflow
Solution Approach 1:
The patent applies parameter changes by controlling the hydrogen content in the stop layer to be less than 7% and adjusting the stop layer thickness to less than 400 angstroms. This modification of material parameters prevents hydrogen-related damage during high-temperature soldering reflow processes, thereby improving data retention and structural reliability of the ReRAM device.
2Reliability
If the stop layer thickness is reduced to less than 400 angstroms, then data retention loss is reduced, but the etching process may become more difficult to control
Solution Approach 1:
The patent resolves this contradiction by precisely controlling multiple parameters of the stop layer: hydrogen content less than 7%, thickness less than 400 angstroms, and specific material composition. These coordinated parameter changes enable the thin stop layer to both reduce data retention loss and maintain etching controllability through optimized material properties.
3Reliability
If the hydrogen content in the stop layer is reduced to less than 7%, then structural reliability is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent addresses manufacturing complexity by establishing specific parameter ranges for the stop layer: hydrogen content less than 7%, thickness less than 400 angstroms. These quantified parameters provide clear manufacturing targets and acceptance criteria, enabling consistent production of low-hydrogen stop layers through controlled deposition processes.
Data Source
AI summary
A ReRAM device is provided. The ReRAM device comprises a first dielectric layer disposed on a substrate and covering a gate oxide structure on the substrate, a first conductive connecting structure disposed on the substrate and penetrating the first dielectric layer, and a ReRAM unit disposed on the first conductive connecting structure. The first dielectric layer comprises a first insulating layer disposed on the substrate, and a stop layer disposed on the first insulating layer and contacting a top surface of the gate oxide structure, wherein the stop layer is a hydrogen controlled layer.