Residual Removal in Selective Deposition for Semiconductor Substrates
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Solution Overview
Problem
Conventional selective deposition methods struggle to confine and form materials at small dimensions on semiconductor substrates, leading to residual materials on undesired locations, which can contaminate devices and cause electrical performance degradation and failure.
Innovation Solution
A method involving a selective deposition process followed by a residual removal process using chemical mechanical polish or etching, specifically designed to remove residuals from undesired locations without damaging the desired materials, utilizing techniques like atomic layer deposition and etching with halogen-containing gas mixtures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective deposition methods are used to form materials at small dimensions, then material confinement and formation capability is improved, but residual materials are formed on undesired locations
Solution Approach 1:
The process is divided into two distinct stages: first, selective deposition forms material on desired locations; second, a separate residual removal process targets and eliminates residual materials on undesired locations. This segmentation allows each process to be optimized independently, achieving both precise material formation and effective residual removal.
Solution Approach 2:
An intermediary residual removal process is introduced between the selective deposition and subsequent device fabrication. This intermediary step uses specific chemical or physical mechanisms to selectively remove residual materials without affecting the deposited materials, acting as a mediator that eliminates harmful residues while preserving desired structures.
2Manufacturing precision
If selective deposition is performed to locally form material layers, then desired materials are formed on certain locations, but residual materials contaminate device structures
Solution Approach 1:
The residual removal process converts the harmful effect of residual materials into a beneficial outcome by selectively eliminating these residues through targeted chemical or physical processes. The residuals that would normally contaminate device structures are instead removed using processes that exploit differences in material properties, such as selective etching or chemical reactions that affect only the residual materials.
3Manufacturing precision
If deposition selectivity is increased to prevent residual formation, then material confinement is improved, but process complexity increases
Solution Approach 1:
The residual removal process exploits parameter differences between deposited materials and residual materials, such as variations in chemical composition, reactivity, or physical properties. By changing process parameters like chemical species, temperature, or energy input, the system selectively targets residual materials for removal while leaving desired materials intact, achieving high selectivity through controllable parameter variations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes residuals from semiconductor substrates, ensuring clean surfaces and preventing device failure by selectively targeting and removing contaminants without damaging the intended metal containing dielectric materials, thereby enhancing the reliability of semiconductor devices.
Implementation Method 1
performing a residual removal process to remove residuals from a second location of the substrate
Implementation Method 2
performing a residual removal process to remove residuals from the substrate
Implementation Method 3
performing a selective deposition process by an atomic layer deposition process to form a metal containing dielectric material on a metal material on a substrate
Data Source
AI summary
Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.