Residue Removing Liquid Composition for Semiconductor Cleaning
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Solution Overview
Problem
Current residue removing liquid compositions for semiconductor devices are ineffective at low-temperature, short-time removal of resist residues and titanium-derived residues without corroding interlayer insulating materials or wiring materials, particularly in the context of aluminum alloy wiring.
Innovation Solution
A residue removing liquid composition containing ammonium fluoride, methanesulfonic acid, and a carbon-carbon triple bond-having compound, such as 3-methyl-1-pentyn-3-ol, is used, which provides anticorrosive effects and enhances residue removability while maintaining low material corrosiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional residue removing liquid compositions are used, then complete removal of resist and Ti-derived residues can be achieved, but the treatment requires high temperature and long time which is incompatible with sheet-fed cleaning mode
Solution Approach 1:
The patent changes the chemical parameters of the removing liquid by using ammonium fluoride instead of conventional compositions, enabling effective residue removal at low temperatures (room temperature or below) in short time (10 seconds to 5 minutes), thus adapting to sheet-fed cleaning mode requirements
2Duration of action of moving object
If fluorine compound-containing compositions are used for low-temperature treatment, then treatment time is reduced, but the compositions cannot remove Ti-derived residues effectively and may corrode Al alloy wiring
Solution Approach 1:
The patent creates a composite chemical system combining ammonium fluoride (providing fluorine for Ti-oxide removal) with methanesulfonic acid (providing controlled etching capability) and water-soluble organic solvents (providing corrosion protection), achieving both effective Ti-derived residue removal and protection of Al alloy wiring from excessive corrosion
3Reliability
If conventional removing liquids are used to ensure complete residue removal, then reliability is improved, but the process cannot be applied to sheet-fed cleaning mode requiring low-temperature short-time treatment
Solution Approach 1:
The patent fundamentally changes the chemical parameters of the removing liquid to enable operation at low temperatures with short treatment times (10 seconds to 5 minutes), making the process compatible with sheet-fed cleaning mode and significantly improving productivity while maintaining complete residue removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively removes resist and titanium-derived residues at low temperatures in a short time without corroding interlayer insulating materials or wiring materials, improving semiconductor device production yield.
Implementation Method 1
a residue removing liquid composition containing (A) ammonium fluoride, (B) methanesulfonic acid
Implementation Method 2
at least one carbon-carbon triple bond-having compound... which provides anticorrosive effects
Data Source
AI summary
Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminum (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it.The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a carbon-carbon triple bond-having compound, (D) a water-soluble organic solvent, and (E) water, wherein the content of (A), (C), (D) and (E) in the residue removing liquid composition is from 0.005 to 2% by mass, from 0.1 to 10% by mass, from 60 to 75% by mass and from 5 to 38% by mass, respectively, and (B) is contained in an amount of from 0.9 to 1.5 times (by mol) the amount of (A).