Resin Composition for ArF Lithography Pattern Formation
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Solution Overview
Problem
Current pattern forming methods in semiconductor manufacturing using ArF excimer laser beams face challenges with light interference in adjacent patterns, reducing optical contrast and resulting in insufficient exposure margin and focal depth, particularly in double exposure systems where the resist composition's polarity change is insufficient for effective development.
Innovation Solution
A pattern forming method involving a resist composition with a resin that increases polarity and decreases solubility in a negative developing solution, combined with a negative developing solution and rinsing solution, to enhance line edge roughness and dimensional stability, allowing for higher resolution patterns without dividing the mask design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a resist composition with insufficient polarity change is used in double exposure systems, then the existing process can be maintained, but line edge roughness increases and dimensional stability deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific resin components (carboxyl-containing resin, hydroxyl-containing resin, and ether-containing resin) that undergo significant polarity changes upon exposure. This enables effective negative development without requiring mask design division, thereby improving line edge roughness and dimensional stability while maintaining process simplicity.
Solution Approach 2:
The patent uses a composite resist composition consisting of multiple resin types (carboxyl-containing resin, hydroxyl-containing resin, and ether-containing resin) that work synergistically. The carboxyl-containing resin provides the primary polarity change mechanism, while the hydroxyl-containing and ether-containing resins enhance the overall polarity transition and solubility characteristics, achieving superior pattern formation without mask division.
2Reliability
If the resist composition's polarity change is insufficient, then the existing resist can be used, but exposure margin decreases and development effectiveness is reduced
Solution Approach 1:
The patent optimizes the chemical composition parameters by selecting resins with specific functional groups (carboxyl, hydroxyl, ether) that exhibit pronounced polarity changes upon exposure. This enhances the exposure margin and development effectiveness by creating a clear solubility contrast between exposed and unexposed regions, while controlling the overall composition to maintain practical manufacturability.
Solution Approach 2:
The patent introduces a carboxyl-containing resin as an intermediary component that mediates the polarity change process. This resin acts as a chemical mediator that enhances the overall polarity transition of the resist composition upon exposure, thereby improving exposure margin and development effectiveness without requiring excessive compositional complexity.
3Manufacturing precision
If conventional resist compositions are used, then manufacturing simplicity is maintained, but resolution and pattern precision are insufficient
Solution Approach 1:
The patent employs a composite resist composition with specifically selected resin components (carboxyl-containing resin at 1-50 wt%, hydroxyl-containing resin at 10-80 wt%, and ether-containing resin at 5-80 wt%) that work together to achieve high resolution and pattern precision. The synergistic interaction between these resin types enables superior pattern formation while maintaining reasonable manufacturing feasibility.
Solution Approach 2:
The patent optimizes the weight percentage parameters of each resin component to achieve the desired balance between pattern precision and manufacturability. By controlling the composition ranges of carboxyl-containing, hydroxyl-containing, and ether-containing resins, the patent achieves high resolution patterns while keeping the formulation process practical for manufacturing.
Data Source
AI summary
A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution:wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.