Radiation-Sensitive Resin Composition for Lithography
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Solution Overview
Problem
Current radiation-sensitive resin compositions face challenges in achieving high resolution, low line width roughness, and storage stability, especially at line widths below 45 nm, with increased demands for depth of focus and defect inhibition, while also requiring improved contraction control during post-exposure baking.
Innovation Solution
A radiation-sensitive resin composition comprising a polymer with an acid-labile group, a radiation-sensitive acid generator, and a compound that forms a salt upon irradiation, which enhances solubility differences and stability, along with a fluorine-rich polymer for improved lithography performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional radiation-sensitive resin compositions are used for miniaturization at line widths of no greater than 45 nm, then resolution is improved, but line width roughness increases and storage stability deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the resin composition by introducing a novel compound with specific structural features (compounds of formula 1 where R1-R6 are specific groups) and controlling their content (0.1-10 mass%). This parameter change improves storage stability while maintaining the resolution achieved through miniaturization.
Solution Approach 2:
The patent creates a composite resin composition containing multiple components: polymer (A) with acid-labile groups, the novel compound (C) of formula 1, and optional compound (D). This composite approach combines the benefits of each component to achieve both high resolution and improved storage stability simultaneously.
2Reliability
If conventional acid diffusion control agents are used, then lithography performance is improved, but line width roughness increases
Solution Approach 1:
The patent modifies the parameters of the acid diffusion control agent by using compounds with specific structural characteristics (formula 1 with defined substituents) and optimizing their concentration (0.1-10 mass%). This results in reduced line width roughness while maintaining good lithography performance.
Solution Approach 2:
The novel compound (C) provides localized acid diffusion control at the molecular level, creating different local environments for acid generation and diffusion. This local quality control reduces line width roughness while maintaining overall lithography performance.
3Manufacturing precision
If resist pattern miniaturization is pursued, then resolution is improved, but depth of focus deteriorates
Solution Approach 1:
The patent adjusts the chemical composition parameters by incorporating compound (C) at optimized concentrations (0.1-10 mass%) alongside polymer (A) and acid generator (B). This parameter optimization enhances depth of focus while maintaining the high resolution achieved through miniaturization.
Solution Approach 2:
The novel compound (C) acts as an intermediary between the acid generator and the polymer matrix, mediating acid diffusion and interaction. This intermediary role improves depth of focus by controlling acid distribution while preserving the resolution benefits of miniaturized patterns.
4Ease of manufacture
If conventional resist compositions are used, then pattern formation is achieved, but contraction during post exposure baking increases
Solution Approach 1:
The patent changes the thermal and chemical parameters of the resist composition by incorporating compound (C) with specific structural features and optimizing its content (0.1-10 mass%). This reduces contraction during post-exposure baking while maintaining effective pattern formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of resist patterns with reduced line width roughness, improved resolution, and enhanced storage stability, while inhibiting defects and contraction during post-exposure baking, suitable for advanced semiconductor manufacturing.
Implementation Method 1
A radiation-sensitive resin composition for use in microfabrication by lithography generates an acid upon irradiation with a radioactive ray such as an electromagnetic wave or a charged particle ray at a light-exposed region
Implementation Method 2
a first compound capable of forming a salt through a structural change in a molecule thereof upon irradiation with a radioactive ray
Implementation Method 3
A chemical reaction in which the acid serves as a catalyst causes the difference in rates of dissolution in a developer solution, between light-exposed regions and light-unexposed regions
Data Source
AI summary
A radiation-sensitive resin composition includes: a first polymer having a first structural unit that includes an acid-labile group; a radiation-sensitive acid generator; and a first compound capable of forming a salt through a structural change in a molecule thereof upon irradiation with a radioactive ray. Basicity of the first compound preferably changes upon irradiation with a radioactive ray. The first compound preferably generates an acid upon irradiation with a radioactive ray. The first compound is preferably represented by formula (1). In formula (1), Ar1 represents a substituted or unsubstituted heteroarenediyl group having 4 to 30 ring atoms and having at least one nitrogen atom as a ring-constituting atom.