Radiation-Sensitive Resin Composition for EUV Lithography
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Solution Overview
Problem
Current positive-type resist materials used in semiconductor lithography, especially with EUV light, face challenges in achieving high sensitivity while maintaining low nano edge roughness and resolution, which affects the electrical properties of integrated circuits.
Innovation Solution
A radiation-sensitive resin composition comprising a compound with an acid-labile group, a solvent, and a resin with an acid-labile group, along with an acid proliferation agent that self-catalytically generates additional acid upon exposure, enhancing sensitivity and resolution while reducing nano edge roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high sensitivity is pursued in a positive type resist that utilizes EUV light, then wafer processing time is reduced, but nano edge roughness deteriorates and resolution decreases
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist system by introducing a specific acid proliferation agent with a particular molecular structure (general formula A) containing hydrocarbon groups and specific functional groups. This chemical parameter change enables the resist to achieve high sensitivity while maintaining controlled acid generation that prevents excessive nano edge roughness
Solution Approach 2:
The patent creates a composite resist system combining a radiation-sensitive resin composition with a specifically designed acid proliferation agent. This composite material approach allows the system to simultaneously achieve high sensitivity, good resolution, and controlled nano edge roughness by leveraging the synergistic effects of the combined components
2Productivity
If high sensitivity is pursued in a positive type resist that utilizes EUV light, then wafer processing time is reduced, but resolution deteriorates
Solution Approach 1:
The patent changes the chemical parameters by incorporating an acid proliferation agent with specific molecular structure (general formula A) that controls acid generation kinetics. This enables high sensitivity while maintaining resolution through controlled chemical amplification
3Manufacturing precision
If asperity (roughness) is fine in EUV light lithography, then electrical properties of integrated circuit may still deteriorate
Solution Approach 1:
The acid proliferation agent creates a self-regulating feedback mechanism where generated acid catalyzes further acid generation in a controlled manner. This feedback loop ensures that acid concentration remains within optimal ranges to prevent both excessive roughness and electrical property deterioration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition forms a resist film with high sensitivity and excellent resolution, improving nano edge roughness and reducing wafer processing time, suitable for advanced lithographic processes using EUV, KrF excimer laser, ArF excimer laser, X-rays, and electron beams.
Implementation Method 1
an acid proliferation agent that self-catalytically generates additional acid upon exposure
Implementation Method 2
lithography that utilizes EUV light
Data Source
AI summary
A radiation-sensitive resin composition includes a compound shown by a following general formula (A), a solvent and a resin having an acid-labile group. Each of R1 and R2 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 25 carbon atoms. Each of X and Z independently represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 25 carbon atoms. Y represents a single bond or the like. n represents an integer from 0 to 5.