Radiation-Sensitive Resin Composition for Defect Suppression
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Solution Overview
Problem
Current resist compositions used in photolithography face challenges in achieving both good storage stability and effective development defect suppression, particularly when using water-repellent compounds, as increased solubility for defect suppression can compromise storage stability, and vice versa.
Innovation Solution
A radiation-sensitive resin composition incorporating a polymer with specific structural units, a radiation-sensitive acid generator, and a solvent, which includes a structural unit with fluorine atoms for water repellency and a cyclic structure to control acid diffusion, ensuring both sensitivity and defect suppression while maintaining storage stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a water-repellent compound is added to the resist composition to improve water repellency and surface modification, then development defect suppression is improved, but storage stability deteriorates due to increased solubility in alkaline developer
Solution Approach 1:
The patent applies local quality by introducing a specific structural unit (I) with fluorine atoms at particular locations within the polymer chain. This localized fluorine substitution provides water repellency and development defect suppression only where needed, without requiring high overall solubility that would compromise storage stability. The cyclic structure at specific positions controls acid diffusion locally while maintaining overall composition stability.
Solution Approach 2:
The patent changes chemical parameters by controlling the content of structural unit (I) within a specific range (5-50 mol%) and adjusting the average number of fluorine atoms per polymer chain (1-10 atoms). These parameter optimizations allow the composition to achieve water repellency and defect suppression while maintaining adequate storage stability through balanced chemical composition.
2Reliability
If the solubility of water-repellent compound in alkaline developer is increased to suppress development defects, then development defect suppression is improved, but storage stability deteriorates
Solution Approach 1:
The patent applies local quality by introducing a specific structural unit (I) with fluorine atoms at particular locations within the polymer chain. This localized fluorine substitution provides water repellency and development defect suppression only where needed, without requiring high overall solubility that would compromise storage stability. The cyclic structure at specific positions controls acid diffusion locally while maintaining overall composition stability.
Solution Approach 2:
The patent changes chemical parameters by controlling the content of structural unit (I) within a specific range (5-50 mol%) and adjusting the average number of fluorine atoms per polymer chain (1-10 atoms). These parameter optimizations allow the composition to achieve water repellency and defect suppression while maintaining adequate storage stability through balanced chemical composition.
3Reliability
If a water-repellent compound with high solubility in alkaline developer is used to improve development defect suppression, then development defect suppression is improved, but line width roughness performance deteriorates
Solution Approach 1:
The patent applies local quality by introducing a specific structural unit (I) with fluorine atoms at particular locations within the polymer chain. This localized fluorine substitution provides water repellency and development defect suppression only where needed, without requiring high overall solubility that would compromise storage stability. The cyclic structure at specific positions controls acid diffusion locally while maintaining overall composition stability.
Solution Approach 2:
The patent changes chemical parameters by controlling the content of structural unit (I) within a specific range (5-50 mol%) and adjusting the average number of fluorine atoms per polymer chain (1-10 atoms). These parameter optimizations allow the composition to achieve water repellency and defect suppression while maintaining adequate storage stability through balanced chemical composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent sensitivity, line width roughness performance, water repellency, and development defect suppression, enabling the formation of high-grade resist patterns with improved storage stability and process efficiency.
Implementation Method 1
a resist pattern is formed on a substrate by generating an acid by irradiating the coating of the resist composition with a radioactive ray through a mask pattern
Implementation Method 2
addition of a water-repellent compound to the resist composition is being tested for the purpose of improving process efficiency by modifying the surface of the resist film
Data Source
AI summary
A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by a formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by a formula (α); and a solvent. RK1 is a hydrogen atom, a fluorine atom, or the like, L1 is an alkanediyl group, and Rf1 is a fluorinated hydrocarbon group. RW is a monovalent organic group having 3 to 40 carbon atoms that contains a cyclic structure, Rfa and Rfb are each independently a fluorine atom or the like, R11 and R12 are each independently a hydrogen atom, a fluorine atom, or the like, n1 is an integer of 1 to 4, n2 is an integer of 0 to 4, no carbonyl group is present between a sulfur atom of the sulfonic acid ion and the cyclic structure of RW, and Z+ is a monovalent onium cation.